| PART |
Description |
Maker |
| K8P2716UZC |
128Mb C-die Page NOR Flash
|
Samsung semiconductor
|
| MR18R162GAF0 MR16R162GAF0 MR18R1624AF0 MR18R1622AF |
64M X 16 RAMBUS MODULE, DMA184
TVS 500W 6.5V BIDIRECT DO-15 6Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
16Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
(MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| K9F5608U0C-VIB0 K9F5608Q0C-HIB0 K9F5608U0C-HIB0 K9 |
TV 3C 3#20 PIN WALL RECP 512Mb/256Mb 1.8 NAND闪存勘误
512Mb/256Mb 1.8V NAND Flash Errata 512Mb/256Mb 1.8 NAND闪存勘误
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4H560838E K4H560838E-TC_LB3 K4H560438E-TC_LA2 K4H |
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4H561638F |
DDR SDRAM 256Mb F-die
|
SAMSUNG
|
| K4S560432E-TC K4S560432E-TC75 K4S561632E-TL75 K4S5 |
256Mb E-die SDRAM Specification 256Mb的电子芯片内存规
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| K4H561638F K4H561638F-TC_LB3 FMB857B K4H560838F-TC |
256Mb F-die DDR SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4H560438J-LC/LB0 K4H560438J-LC/LB3 K4H560838J-LC/ |
256Mb J-die DDR SDRAM Specification
|
Samsung semiconductor
|
| AM29BL802C_03 AM29BL802C AM29BL802CB80DGE1 AM29BL8 |
Am29BL802C (Known Good Die Supplement)
8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only, Burst-mode, Boot Sector Flash Memory-Die Revision 1
|
Advanced Micro Devices
SPANSION[SPANSION]
|
| MR18R162CGMN0 |
(16Mx16)*12(16)pcs RIMMModule based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V Data Sheet
|
Samsung Electronic
|
