| PART |
Description |
Maker |
| SA36AG |
500 Watt Peak Power MiniMOSORB Zener Transient Voltage Suppressors 500 Watt Peak Power MiniMOSORBZener
|
ON Semiconductor
|
| P4KE11 P4KE6.8A P4KE68 P4KE56A P4KE24 P4KE68A P4KE |
400W Peak Power / 1.0W Steady State 400W Peak Power TVS
|
SeCoS Halbleitertechnologie GmbH
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
| 1N6373A ON0017 1N6382 1N6383 1N6384 1N6385 1N6386 |
1500 Watt Peak Power 5 Watt Steady State Zener Transient Voltage Supperssor(双向,峰值功500W,稳W,最大反向电6V齐纳瞬变电压抑制 1500 Watt Peak Power 5 Watt Steady State Zener Transient Voltage Supperssor(双向,峰值功500W,稳W,最大反向电8V齐纳瞬变电压抑制 1500 Watt Peak Power 5 Watt Steady State Zener Transient Voltage Supperssor(双向,峰值功500W,稳W,最大反向电5V齐纳瞬变电压抑制 1500 Watt Peak Power 5 Watt Steady State Zener Transient Voltage Supperssor(双向,峰值功500W,稳W,最大反向电2V齐纳瞬变电压抑制 1500 Watt Peak Power 5 Watt Steady State Zener Transient Voltage Supperssor(双向,峰值功500W,稳W,最大反向电0V齐纳瞬变电压抑制 1500 Watt Peak Power 5 Watt Steady State Zener Transient Voltage Supperssor(双向,峰值功500W,稳W,最大反向电V齐纳瞬变电压抑制 From old datasheet system
|
ON Semiconductor
|
| DI-122 |
13 W (17.2 W Peak) Non-Isolated Power Supply for White Goods: <150 mW No-load Power Consumption
|
Power Integrations, Inc.
|
| NCP1254ASN65T1G NCP1254BSN65T1G |
Current-Mode PWM Controller for Off-line Power Supplies featuring Peak Power Excursion
|
ON Semiconductor
|
| NCP1249AD65R2G NCP1249BD65R2G |
High-Voltage Current-Mode PWM Controller Featuring Peak Power Excursion and Extremely Low Stand-by Power Consumption
|
ON Semiconductor
|
| NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. Receptacle With A Wire Wrap Tail Silicon Power Rectifier Diode / 40 Amp Silicon Power Rectifier Diode 40 Amp NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp 40 A, 300 V, SILICON, RECTIFIER DIODE 40 A, 200 V, SILICON, RECTIFIER DIODE
|
NTE Electronics, Inc. NTE[NTE Electronics]
|
| NTE5705 NTE5700 NTE5702 NTE5701 NTE5703 NTE5704 |
Industrial power module. Hybrid doubler. Max repetitive peak reverse voltage Vrrm = 1200V. Industrial power module. SCR AC switch. Max repetitive peak reverse voltage Vrrm = 1200V. Industrial power module. Single phase, all SCR bridge. Max repetitive peak reverse voltage Vrrm = 1200V. Industrial power module. Single phase, hybrid bridge, common anode, freewheeling diode. Max repetitive peak reverse voltage Vrrm = 1200V.
|
NTE[NTE Electronics]
|
| NTE5869 NTE5850 NTE5866 NTE5861 NTE5863 NTE5862 NT |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A. Silicon Power Rectifier Diode 6 Amp Silicon Power Rectifier Diode, 6 Amp Silicon Power Rectifier Diode / 6 Amp Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
|
NTE[NTE Electronics]
|