| PART |
Description |
Maker |
| VMO550-01F |
HiPerFET MOSFET Module 590 A, 100 V, 0.0021 ohm, N-CHANNEL, Si, POWER, MOSFET
MOSFET Modules
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| VUM24-05 VUM2405 VUM24-05N |
Power Factor Correction Modules: MOSFET
Power MOSFET Stage for Boost Converters
|
IXYS[IXYS Corporation]
|
| SKM313B010 |
Power MOSFET Modules
|
Semikron International
|
| SKM180A020 |
Power MOSFET Modules
|
Semikron International
|
| SKM214A |
Power MOSFET Modules
|
Semikron International
|
| VWM350-0075P |
MOSFET Modules
Three phase full bridge with Trench MOSFETs 340 A, 75 V, 0.0033 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| VBO130-12NO7 VBO130-08NO7 VBO130-16NO7 VBO130-14NO |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges
|
IXYS
|
| VBO52-12NO7 VBO72-12NO7 VBO72-08NO7 VBO72-18NO7 VB |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges
|
IXYS
|
| VUO27-06NO7 VUO27-08NO7 VUO27-12NO7 |
Power Modules/Rectifier Bridge Modules: Three Phase Diode Bridges
|
IXYS
|
| VBE26-06NO7 |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges with Fast Recovery Diodes
|
IXYS
|
| TM25RZ-24 TM25RZ-2H TM25EZ-24 TM25EZ-2H TM25RZ/EZ- |
THYRISTOR MODULES HIGH POWER GENERAL USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
