PART |
Description |
Maker |
K7R320982C K7R323682C-FEC30 K7R321882C K7R323682C |
1Mx36 & 2Mx18 & 4Mx9 QDR II b2 SRAM
|
SAMSUNG[Samsung semiconductor]
|
K7A323600M K7B323625M-QC75 K7A321800M K7A321800M-Q |
1Mx36 & 2Mx18 Synchronous SRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K7P321874C K7P323674C K7P323674C-HC300 |
1Mx36 & 2Mx18 SRAM 1M X 36 LATE-WRITE SRAM, 1.6 ns, PBGA119
|
Samsung semiconductor
|
K7N321845M-QC25 K7N321845M-QC20 K7N321801M-QC20 K7 |
1Mx36 & 2Mx18-Bit Pipelined NtRAM 1Mx36 & 2Mx18 Flow-Through NtRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K7N323601M-QC20 K7N323601M DSK7N323601M K7N323645M |
1Mx36 & 2Mx18 Flow-Through NtRAM 1Mx36 & 2Mx18-Bit Pipelined NtRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K7R323684MK7R321884MK7R320884M |
1Mx36 & 2Mx18 & 4Mx8 QDRII b4 SRAM Data Sheet
|
Samsung Electronic
|
IS61DDPB22M18A IS61DDPB22M18A/A1/A2 IS61DDPB21M36A |
2Mx18, 1Mx36 36Mb DDR-IIP(Burst 2) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
K7R323682MK7R321882MK7R320882M |
1Mx36-bit, 2Mx18-bit, 4Mx8-bit QDRII b2 SRAM Data Sheet
|
Samsung Electronic
|
IS61QDP2B21M36A1 IS61QDP2B21M36A2 |
1Mx36 and 2Mx18 configuration available
|
Integrated Silicon Solu...
|
IDT71P72804 IDT71P72604 IDT71P72604S167BQ IDT71P72 |
1.8V 1M x 18 QDR II PipeLined SRAM 1.8V 512K x 36 QDR II PipeLined SRAM Storage, Cases Tools, Applicator RoHS Compliant: NA Nickel Cadmium Battery Pack; Voltage Rating:12V RoHS Compliant: NA SIGN, FIRE EXTINGUISHER, 100X200MM; RoHS Compliant: NA 18Mb Pipelined QDRII SRAM Burst of 2 35.7流水线推QDRII SRAM的爆 18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.5 ns, PBGA165 18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.45 ns, PBGA165
|
IDT http:// Integrated Device Technology, Inc.
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