| PART |
Description |
Maker |
| IS61DDPB42M36A/A1/A2 IS61DDPB44M18A IS61DDPB44M18A |
4Mx18, 2Mx36 72Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| IS61QDP2B22M36A2 |
2Mx36 and 4Mx18 configuration available
|
Integrated Silicon Solu...
|
| K7I163684B K7I161884B |
512Kx36 & 1Mx18 DDRII CIO b4 SRAM
|
Samsung semiconductor
|
| K7I321884C K7I323684C |
1Mx36 & 2Mx18 DDRII CIO b4 SRAM
|
Samsung semiconductor
|
| K7K1618U2C K7K1636U2C |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| K7I161882B-FC16 K7I161882B-FC20 K7I161882B-FC25 K7 |
512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM 512Kx36位，1Mx18位首席信息官b2DDRII的SRAM
GT 35C 35#16 PIN PLUG RTANG
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K7K3236U2C K7K3218U2C-EC330 K7K3218U2C-FC330 |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
DDR SRAM, PBGA165 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165
|
Samsung semiconductor
Maxim Integrated Products, Inc.
|
| Z8036 Z8536 |
CAP POLYPROPYLENE .0015UF 50V 1%
Z-CIO AND CIO COUNTER/TIMER AND PARALLEL I/O UNIT
|
ZiLOG, Inc.
|
| IS61DDB42M36-250M3 IS61DDB42M36-250M3L IS61DDB42M3 |
72 Mb (2M x 36 & 4M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs
|
Integrated Silicon Solution, Inc
|
| IS61DDPB22M36 IS61DDPB22M36-375M3 IS61DDPB22M36-37 |
72 Mb (2M x 36 & 4M x 18) DDR-IIP (Burst of 2) CIO Synchronous SRAMs
|
Integrated Silicon Solution, Inc
|
| R1QFA7218AB R1QCA7218AB R1QDA7218AB R1QCA7236AB R1 |
72-Mbit DDRII SRAM 2-word Burst
|
Renesas Electronics Corporation
|
| IDT71P71104 IDT71P71204 |
(IDT71P71x04) 18Mb Pipelined DDRII SRAM Burst of 2
|
IDT
|
