| PART |
Description |
Maker |
| CGD987HCI |
1 GHz, 27 dB gain GaAs high output power doubler
|
NXP Semiconductors
|
| LD7126 LD7126SERIES |
DBS-Band, 2.0KW/2.4KW Klystrons for Communications
17 GHz BAND, 2.0 kW/2.4 kW, HIGH EFFICIENCY, HIGH POWER GAIN
17 GHz BAND / 2.0 kW/2.4 kW / HIGH EFFICIENCY / HIGH POWER GAIN
|
NEC[NEC]
NEC Corp.
|
| LD7111 LD7111SERIES |
DBS-Band, 1.7KW Klystrons for Communications
17 GHz BAND, 1.7 kW, HIGH EFICIENCY, HIGH POWER GAIN
17 GHz BAND / 1.7 kW / HIGH EFICIENCY / HIGH POWER GAIN
|
NEC[NEC]
|
| BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
|
Siemens Semiconductor Group
|
| LD7202W LD7202 LD7202A LD7202B LD7202L |
14 GHz, 600 W CW, PPM FOCUSING, HIGH POWER GAIN 14千兆赫，600 W连续，分之为重点，高功率增益
14 GHz / 600 W CW / PPM FOCUSING / HIGH POWER GAIN
|
NEC Corp.
NEC, Corp.
NEC[NEC]
|
| TSDF1920W |
25-GHz NPN RF transistors
very high power gain;
Very low-noise;
25 GHz Silicon NPN Planar RF Transistor
|
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| SST12LF09-Q3CE |
2.4 GHz High-Gain, High-Efficiency Front-end Module
|
Microchip Technology
|
| AMMP-5620 |
6 - 20 GHz High Gain Amplife
|
AVAGO TECHNOLOGIES
|
| RFMA1720-1W-Q7 |
17.7 - 19.7 GHz High-Gain Surface Mounted PA
|
Excelics Semiconductor, Inc.
|
| CGD985HCI |
1 GHz, 25 dB gain GaAs high output power doubler CGD985HCI<SOT115J|<<<1<Always Pb-free,;CGD985HCI/01<SOT115J|<<<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
