| PART |
Description |
Maker |
| AD603SQ/883B AD603 AD603SQ883B |
Low noise, 90 MHz variable-gain amplifier
Low Noise, 90 MHz Variable Gain Amplifier
Low Noise, Voltage-Controlled Amplifier For Use In RF And IF AGC Systems
|
Analog Devices, Inc.
|
| MAX2650 MAX2650EUS-T |
DC-to-Microwave / 5V Low-Noise Amplifier
DC-to-Microwave, 5V Low-Noise Amplifier 800 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| K4S64323LF-DG_S15 K4S64323LF-DG_S1H K4S64323LF-DG_ |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-SOIC -55 to 125
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP -55 to 125
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| KTC3880 KTC3911 |
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY LOW NOISE AMPLIFIER, VHF BAND AMPLIFIER) 外延平面NPN晶体管（高频低噪声放大器，甚高频波段放大器）
EPITAXIAL PLANAR NPN TRANSISTOR (LOW NOISE AMPLIFIER)
|
KEC Holdings
KEC(Korea Electronics)
|
| UPA827 UPA827TF UPA827TF-T1 PA827TF |
High-Frequecy Low-Noise Amplifier NPN Transistor(高频低噪声放大器NPN晶体
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLD
|
NEC Corp.
|
| MGA-17516-BLKG MGA-17516-TR1G |
Low Noise, High Linearity Match Pair Low Noise Amplifier
|
AVAGO TECHNOLOGIES LIMITED
|
| 2SC9014 |
PRE-AMPLIFIER, LOW LEVEL & LOW NOISE
PRE-AMPLIFIER/ LOW LEVEL & LOW NOISE
Transistors
PRE-AMPLIFIER, LOW LEVEL & LOW NOISE
|
Electronic Theatre Controls, Inc.
ETC
List of Unclassifed Manufacturers
USHA India LTD
|
| K4S64323LF-DN15 K4S64323LF-DN15-PB K4S64323LF-DN1H |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 0 to 70 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP 0 to 70 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125 2Mx32移动SDRAM 90FBGA
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Dual Rail-To-Rail Micropower Operational Amplifier 8-SOIC 0 to 70
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| AN1438 |
LOW NOISE AMPLIFIER OPTIMIZED FOR MINIMUM NOISE FIGURE AT 1.9GHZ USING START420
|
SGS Thomson Microelectronics
|
| ATR0610-PQQ ATR0610 |
2.7 V GPS LOW NOISE AMPLIFIER RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Atmel Corp.
ATMEL[ATMEL Corporation]
|
