| PART |
Description |
Maker |
| D4SBS610 |
SBD Bridge
|
Shindengen Electric Mfg.Co.Ltd
|
| D10SBS410 |
SBD Bridge
|
Shindengen Electric Mfg.Co.Ltd
|
| D6SBN20 |
SBD Bridge Diode
|
Shindengen Electric Mfg.Co.Ltd
|
| D4SBS4 |
Schottky Rectifiers (SBD) / SBD Bridges
|
Shindengen
|
| MCH5812 |
Nch SBD
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| MCH5811 |
Nch SBD
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| MCH5818 |
Pch SBD
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
|
Sanyo Semicon Device
|
| D15XBS6 |
Schottky Rectifiers (SBD) / SBD Bridges
Schottky Rectifiers(SBD)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
| GBPC25 GBPC GBPC35 GBPC2502A GBPC2502W GBPC2504W G |
SINGLE PHASE BRIDGE
Aluminum Polymer Radial Lead Capacitor; Capacitance: 820uF; Voltage: 6.3V; Case Size: 10x13 mm; Packaging: Bulk
400V Bridge in a GBPC-W package
800V Bridge in a GBPC-W package
400V Bridge in a GBPC-A package
600V Bridge in a GBPC-A package
800V Bridge in a GBPC-A package
1000V Bridge in a GBPC-A package
1200V Bridge in a GBPC-A package
1200V Bridge in a GBPC-W package
600V Bridge in a GBPC-W package
1000V Bridge in a GBPC-W package
|
IRF[International Rectifier]
|
| MA738 MA2Q738 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD)
From old datasheet system
|
PANASONIC[Panasonic Semiconductor]
|
| MA3S781E MA3S781D |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD)
|
Matsshita / Panasonic
|
