| PART |
Description |
Maker |
| EID1416A1-8 |
14.0-16.0GHz 8-Watt Internally-Matched Power FET
|
Excelics Semiconductor, Inc.
|
| RFRX1702 |
GaAs MMIC IQ Downconverter 17.7GHz to 19.7GHz
|
RF Micro Devices
|
| TIM4450-12UL |
HIGH POWER P1dB=41.5dBm at 4.4GHz to 5.0GHz
|
Toshiba Semiconductor
|
| SY55851/851A SY55851/51A |
High Efficient Rectifier Diodes
2.5V/3V/5V, 3.0GHz CML AnyGateTMAny Logic W/50- Or 100- Outputs
|
Micrel Semiconductor
|
| TIM7785-25UL |
HIGH POWER P1dB=44.5dBm at 7.7GHz to 8.5GHz
|
Toshiba Semiconductor
|
| TIM7785-12UL09 |
HIGH POWER P1dB=41.5dBm at 7.7GHz to 8.5GHz
|
Toshiba Semiconductor
|
| LT5575 LT5575EUFTRPBF LT5568 LT5528 LT5575EUF LT55 |
LT5575
800MHz to 2.7GHz High Linearity Direct Conversion Quadrature Demodulator
|
Linear Technology
|
| CPH6001A12 CPH6001A |
RF Transistor, 12V, 100mA, fT=6.7GHz, NPN Single CPH6
High-Frequency Low-Noise Amplifier Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| MGFC39V4450A C394450A |
From old datasheet system
4.4~5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET
4.4 - 5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
