| PART |
Description |
Maker |
| 3DD5036-O-A-N-D 3DD5036 |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5036 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD5032 3DD5032-O-A-N-D 3DD5032-Y-O-A-B-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5032 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| IRG4PH30KPBF |
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Ultrafast IGBT
|
International Rectifier
|
| IRG4PH20KPBF IRG4PH20KPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR
Short Circuit Rated UltraFast IGBT
|
International Rectifier
|
| TAN250A |
Case Outline 55AW / Style 1
high power COMMON BASE bipolar transistor.
|
GHZTECH[GHz Technology]
|
| BUZ77B C67078-S1320-A5 BUZ77BC67078-S1320-A5 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) SIPMOS功率晶体管（N通道增强模式雪崩级）
DMOS driver for bipolar stepper motor
SIPMOS ? Power Transistor
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MGY25N120D_D ON1933 MGY25N120D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
From old datasheet system
IGBT & DIODE IN TO-264 25 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCUIT RATED
|
ONSEMI[ON Semiconductor]
|
| TC74HC123AF TC74HC123AFN TC74HC123AP HC123 |
Bipolar Transistor; Package/Case:TO-126; Current Rating:500mA; Voltage Rating:300V
DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
http://
|
| HCA0207 |
Bipolar Transistor; Package/Case:TO-3P; Current Rating:12A; Voltage Rating:800V
Carbon Film Resistors, Power Type
From old datasheet system
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| IRFV360 |
400V Single N-Channel Hi-Rel MOSFET in a TO-258AA package
REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR
|
IRF[International Rectifier]
|
| BUZ100 C67078-S1348-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) SIPMOS功率晶体管（N通道增强模式雪崩额定dv / dt的评价）
SIPMOS ? Power Transistor
From old datasheet system
|
SIEMENS AG
http://
Infineon
Siemens Semiconductor Group
|
| BUZ104S Q67040-S4007-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature) 14 A, 55 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature)
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175°C operating temperature)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
