| PART |
Description |
Maker |
| 3DD2101 3DD2101-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2101 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD1555 3DD1555-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD2109 3DD2109-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2109 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| IRG4RC10KPBF |
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT
|
International Rectifier
|
| HDMP-1014 HDMP-1012 |
Bipolar Transistor; Collector Emitter Voltage, Vceo:400V; Transistor Polarity:N Channel; Power Dissipation:250W; C-E Breakdown Voltage:400V; DC Current Gain Min (hfe):10; Collector Current:50A; Package/Case:TO-3
Phase Lock Loop (PLL) IC; Number of Circuits:1; Package/Case:14-DIP; Mounting Type:Through Hole 4Low成本千兆速率发接收芯片
|
Agilent(Hewlett-Packard)
|
| IRGPC40K 1982 |
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT
From old datasheet system
|
IRF[International Rectifier]
|
| TC74HC123AF TC74HC123AFN TC74HC123AP HC123 |
Bipolar Transistor; Package/Case:TO-126; Current Rating:500mA; Voltage Rating:300V
DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
http://
|
| BSS806N |
OptiMOS2 Small-Signal-Transistor Ultra Logic level (1.8V rated) Avalanche rated
|
TY Semiconductor Co., Ltd
|
| IRFV360 |
400V Single N-Channel Hi-Rel MOSFET in a TO-258AA package
REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR
|
IRF[International Rectifier]
|
| BUZ102S Q67040-S4011-A2 |
High Speed CMOS Logic 12-Stage Binary Counter 16-SOIC -55 to 125 SIPMOS功率晶体管（N通道增强模式雪崩额定dv / dt的评价）
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)
SIPMOS ? Power Transistor
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
