| PART |
Description |
Maker |
| 3DD5010HF-O-A-N-D 3DD5310HF |
CASE-RATED BIPOLAR TRANSISTOR 3DD5310 FOR LOW FREQUENCY AMPLIFICATION
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD5031 3DD5031-O-A-N-D 3DD5031-Y-O-A-B-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5031 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD2102-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2102 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD2109 3DD2109-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2109 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| IRG4PH30KPBF |
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Ultrafast IGBT
|
International Rectifier
|
| IRG4PC40KPBF |
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT
|
International Rectifier
|
| IRG4PH20KPBF IRG4PH20KPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR
Short Circuit Rated UltraFast IGBT
|
International Rectifier
|
| 2SA1708S-AN EN3094B 2SC4488T-AN 2SC4488S-AN |
Bipolar Transistor
Bipolar Transistor Adoption of FBET, MBIT processes
Bipolar Transistor ?0V, ?A, Low VCE(sat) PNP Single PCP
|
ON Semiconductor
|
| IRFV360 |
400V Single N-Channel Hi-Rel MOSFET in a TO-258AA package
REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR
|
IRF[International Rectifier]
|
| BUZ100 C67078-S1348-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) SIPMOS功率晶体管（N通道增强模式雪崩额定dv / dt的评价）
SIPMOS ? Power Transistor
From old datasheet system
|
SIEMENS AG
http://
Infineon
Siemens Semiconductor Group
|
