| PART |
Description |
Maker |
| BGA915N7 |
Silicon Germanium GPS Low Noise Amplifier
|
Infineon Technologies AG
Infineon Technologies A...
|
| BGA231L7 |
Silicon Germanium GPS Low Noise Amplifier
|
Infineon Technologies AG
|
| BGA7L1N6 |
Silicon Germanium Low Noise Amplifier for LTE
|
Infineon Technologies A...
|
| BFP740F BFP740F-15 |
Low Noise Silicon Germanium Bipolar RF Transistor
|
Infineon Technologies A...
|
| SGL-0363Z |
5-2000 MHz Low Noise Amplifier Silicon Germanium
|
SIRENZA[SIRENZA MICRODEVICES]
|
| SGL0622Z |
5MHz to 4000MHz LOW NOISE MMIC AMPLIFIER SILICON GERMANIUM
|
RF Micro Devices
|
| BGA62208 |
Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection
|
Infineon Technologies AG
|
| RQG1001UP-TL-E |
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
|
Renesas Electronics Corporation.
|
| S1M8662AX01-F0T0 S1M8662A DSS1M8662A |
RX IF/BBA WITH GPS
RX IF / BBA WITH GPS
CDMA/PCS/GPS Triple Mode IF/ baseband IC
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| RQG1004UPAQL RQG1004UP-TL-E |
35 mA, 3.5 V, NPN, SiGe, SMALL SIGNAL TRANSISTOR 1.40 X 0.80 MM, 0.55 MM HEIGHT, MFPAK-4
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
|
Renesas Electronics, Corp.
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| RXM-GPS-R4-T |
GPS Modules R4 Series GPS Recvr Module Tape and Reel
|
Linx Technologies, Inc.
|
| DSS1M8662A S1M8662AX01-F0T0 |
RX IF/BBA WITH GPS
CDMA/PCS/GPS Triple Mode IF/ baseband IC 码分多址/全球定位系统三模式中基带IC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
