| PART |
Description |
Maker |
| 3DD4460 3DD4460-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD4460 FOR LOW FREQUENCY
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD4460 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD5010A-O-A-N-D 3DD5310A |
CASE-RATED BIPOLAR TRANSISTOR 3DD5310 FOR LOW FREQUENCY AMPLIFICATION
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD2101 3DD2101-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2101 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD1555 3DD1555-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD2901-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2901 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| TAN250A |
Case Outline 55AW / Style 1
high power COMMON BASE bipolar transistor.
|
GHZTECH[GHz Technology]
|
| BSS806N |
OptiMOS2 Small-Signal-Transistor Ultra Logic level (1.8V rated) Avalanche rated
|
TY Semiconductor Co., Ltd
|
| HCA0207 |
Bipolar Transistor; Package/Case:TO-3P; Current Rating:12A; Voltage Rating:800V
Carbon Film Resistors, Power Type
From old datasheet system
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| IRGBC30K-S |
Aluminum Polymer SMT Capacitor; Capacitance: 150uF; Voltage: 4V; Case Size: 6.3x6 mm; Packaging: Tape & Reel
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=14A)
|
IRF[International Rectifier]
|
| BUZ104L C67078-S1358-A2 BUZ104LE3046 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated Low on-resistance) SIPMOS功率晶体管（N通道增强模式雪崩额定逻辑电平dv /额定的胸苷低电阻
From old datasheet system
SIPMOS ? Power Transistor
N-Channel SIPMOS Power Transistor
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| BUZ104S Q67040-S4007-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature) 14 A, 55 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature)
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175°C operating temperature)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
