| PART |
Description |
Maker |
| DVCR476.3LF DXT49310.000A20 DXT49310.000A203 DXT49 |
CRYSTALS REDUCED HEIGHT DXT493
|
Dubilier
|
| 46235-5004 SD-46235-001 |
Micro-Fit 3.0 High Mating Cycle, Reduced Mating Force, Crimp Terminal
Micro-Fit 3.0?/a> High Mating Cycle, Reduced Mating Force, Crimp Terminal
|
Molex Electronics Ltd.
|
| SP6831EK SP6831EK_TR SP6831TR SP6830 SP6830EK SP68 |
Low Power Voltage Inverters With Shutdown
CONNECTOR, BATTERY, 5WAY; Depth, external:2.4mm; Length / Height, external:5mm; Width, external:5mm; Cells, No. of:1; Connector type:MOBO Reduced Size Battery Connector; Current rating:3A; Life, mechanical:5000 Cycles; Pitch, RoHS Compliant: Yes
|
SIPEX[Sipex Corporation]
|
| DG3537DB-T5 DG3538DB-T5 DG5340DB |
MICRO FOOT 3x3 0.5-mm PITCH, 0.238-mm BUMP HEIGHT 微动x3 0.5毫米间距.238毫米的突起高
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
|
| SI4392DY SI4392DY06 |
N-Channel Reduced Qg, Fast Switching WFET?
N-Channel Reduced Qg, Fast Switching WFET庐
N-Channel Reduced Qg, Fast Switching WFET㈢
|
Vishay Siliconix
|
| M38747M4T-XXXFS M38747M4T-XXXGP M38748E4T-XXXFS M3 |
DCM37PP
Single 2.7-V High-Slew-Rate Rail-to-Rail Output Operational Amplifier w/Shutdown 8-SOIC 0 to 70
Quad 1.8-V, Micro-power, Rail-to-Rail, Single Supply Amplifier with Shutdown 16-SOIC -40 to 85
Quad 1.8-V, Micro-power, Rail-to-Rail, Single Supply Amplifier with Shutdown 16-SOIC 0 to 70
Single 2.7-V High Slew Rate Rail-to-Rail Output Operational Amplifier 8-SOIC 0 to 70
Single 2.7-V High Slew Rate Rail-to-Rail Output Operational Amplifier 5-SOT-23 0 to 70
BATTERY, SILVER OXIDE, V317; Voltage, output:1.5V; Capacity, energy storage:12.5mAh; Technology, Battery:Silver Oxide; Length / Height, external:1.7mm; Diameter, body:5.8mm; Battery size code:Button; Weight:0.18g RoHS Compliant: NA
BATTERY, SILVER OXIDE, V315; Voltage, output:1.5V; Capacity, energy storage:21mAh; Technology, Battery:Silver Oxide; Length / Height, external:1.6mm; Diameter, body:7.9mm; Battery size code:Button; Weight:0.33g RoHS Compliant: NA
BATTERY, SILVER OXIDE, V319; Voltage, output:1.5V; Capacity, energy storage:18mAh; Technology, Battery:Silver Oxide; Length / Height, external:2.7mm; Diameter, body:5.8mm; Battery size code:Button; Weight:0.31g RoHS Compliant: NA
Global Limit Switches Series GLS: Wobble - Coil Spring, 2NC Slow Action, 20 mm
CABLE FLAT FLEX 16POS 1MM 2,1
Single 2.7-V High-Slew-Rate Rail-to-Rail Output Operational Amplifier w/Shutdown 8-SOIC -40 to 125
Single 2.7-V High-Slew-Rate Rail-to-Rail Output Operational Amplifier w/Shutdown 8-MSOP -40 to 125
Single 2.7-V High-Slew-Rate Rail-to-Rail Output Operational Amplifier w/Shutdown 8-PDIP -40 to 125
Single 2.7-V High-Slew-Rate Rail-to-Rail Output Operational Amplifier w/Shutdown 8-PDIP 0 to 70
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机
192280030 单芯位CMOS微机
Dual 1.8-V, Micro-power, Rail-to-Rail, Single Supply Amplifier with Shutdown 14-SOIC -40 to 85 单芯位CMOS微机
Dual 1.8-V, Micro-power, Rail-to-Rail, Single Supply Amplifier with Shutdown 10-MSOP -40 to 85 单芯位CMOS微机
Quad 1.8-V, Micro-power, Rail-to-Rail, Single Supply Amplifier 14-SOIC 0 to 70 单芯位CMOS微机
Quad 1.8-V, Micro-power, Rail-to-Rail, Single Supply Amplifier with Shutdown 16-TSSOP -40 to 85
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
Renesas Electronics, Corp.
http://
Mitsubishi Electric Sem...
|
| NB2760A NB2760ASNR2 NB2760ASNR2G |
Low Power, Reduced EMI Clock Synthesizer(低功降低EMI时钟合成
|
ON Semiconductor
|
| NB2779A |
Low Power, Reduced EMI Clock Synthesizer(低功率，抑制EMI的时钟合成器)
|
ON Semiconductor
|
| AS1720 AS1720A AS1720B |
Solenoid / Valve Dr iver wi th Cur rent Limi tat ion
|
austriamicrosystems AG
|
| 1N4942 1N4946 1N4947 |
VOLTAGE RANGE 200 TO 1000 VOLTS CUR RENT 1.0 AMPERE
|
Shenzhen Taychipst Electronic Co., Ltd
|
| IMP1815 IMP1817 IMP1816 IMP1812 IMP1811 IMP1810 IM |
Low Poower, 5V µP Reset, Power Management
Low Poower, 3.3V µP Reset, Power Management
Lo Low P w Po ow wer er, 5V , 5V µ µP P Reset
From old datasheet system
|
iMP
|
| SI4850EY SI4850EY-E3 SI4850EY-T1 SI4850EY-T1-E3 |
N-Channel Reduced Qg, Fast-Switching MOSFET N沟道Qg，快速开关MOSFET
N-Channel Reduced Qg, Fast Switching MOSFET N沟道减少Qg和，快速开关MOSFET
N-Channel Reduced Qg/ Fast Switching MOSFET
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
|
