| PART |
Description |
Maker |
| UPB417C UPB417D |
8192 BIT BIPOLAR TTL
|
NEC
|
| 82S129 N82S126A N82S126N N82S129A N82S129N 82S126 |
V(cc): 7.0V; V(in): 5.5V; ; 1Kbit TTL bipolar PROM. For phototyping/volume production, sequential conrollers, format conversion, hardwired algorithms, etc.
1K BIT TTL BIPOLAR PROM
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| UPB403C UPB403D UPB423C UPB423D |
1024 BIT BIPOLAR TTL
|
NEC
|
| UPB409C UPB409D UPB429C UPB429D |
16384 BIT BIPOLAR TTL
|
NEC
|
| 82S131 |
2K-bit TTL bipolar PROM
|
Philips
|
| N82S129 |
1K Bit TTL Bipolar PROM
|
Philips
|
| LC3564B LC3564BM LC3564BS LC3564BT LC3564BT-10 LC3 |
x8 SRAM
64K (8192-word 8-bit) SRAM with OE, CE1, and CE2 Control Pins
64K (8192-word ? 8-bit) SRAM with OE, CE1, and CE2 Control Pins
64K (8192-word x8-bit) SRAM with NOT OE, NOT CE1, and CE2 Control Pins
64K (8192-word x 8-bit) SRAM with NOT OE, NOT CE1, and CE2 Control Pins
64K (8192-word 8-bit) SRAM with OE / CE1 / and CE2 Control Pins
64K (8192-word ′ 8-bit) SRAM with OE, CE1, and CE2 Control Pins
64K (8192-word 8-bit) SRAM with OE, CE1, and CE2 Control Pins 64K的（8192字?8位）与光电，CE1上SRAM和控制引脚铈
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
Sanyo Electric Co., Ltd.
|
| M41T56C64MY6F M41T56C64 M41T56C64MY6E |
Serial Real Time Clock with 56 bytes of NVRAM 64 Kbit (8192 bit x 8) EEPROM(56 bytes NVRAM4 Kbit (8192 bit x 8) EEPROM的串行实时时
Serial Real Time Clock with 56 bytes of NVRAM 64 Kbit (8192 bit x 8) EEPROM
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| M41T56C64MY6E |
512 bit (64 bit x8) Serial Access TIMEKEEPER SRAM 64 Kbit (8192 bit x8) EEPROM
|
ST Microelectronics
|
| M5M5165FP-10 M5M5165FP-10L M5M5165FP-12 M5M5165FP- |
65536-BIT (8192-WORD BY 8-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Semiconductor
|
| AM2864AE |
8192 x 8-Bit Electrically Erasable PROM
|
AMD
|
| HN27C64G |
8192-word x 8-bit UV Erasable and Programmable CMOS ROM
|
Hitachi Semiconductor
|
