| PART |
Description |
Maker |
| IM5603 IM5623 |
ELECTRICALLY PROGRAMMABLE 1024 BIT BIPOLAR READ ONLY MEMORY 1024位电可编程只读存储器双极
(IM5603 / IM5623) ELECTRICALLY PROGRAMMABLE 1024 BIT BIPOLAR READ ONLY MEMORY
|
Intersil, Corp.
Intersil Corporation
|
| MU9C1480A MU9C1480A-12DC MU9C1480A-12DI MU9C1480A- |
THE 1024 X 64-BIT LANCAM FACILITATES NUMEROUS 1024 X 64-BIT CMOS CONTENT-ADDRESSABLE MEMORY (CAM)
|
ETC
|
| N82S181A N82S181 |
8K-Bit TTL Bipolar PROM
|
NXP
Philips Semiconductors
|
| UPB419C UPB419D |
16384 BIT BIPOLAR TTL
|
NEC
|
| UPB412 UPB412C UPB412D |
2048 BIT BIPOLAR TTL
|
NEC
|
| UPB405C UPB405D UPB425C UPB425D |
4096 BIT BIPOLAR TTL
|
NEC
|
| N82S23A |
256-bit TTL bipolar PROM 32 x 8
|
Philips
|
| IS23SC4418 IS23SC4428 |
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte.(1024 x 8位，每个字节带可编程写保护的EEPROM) 1024 × 8位的EEPROM，具有可编程写保护每个字节。（1024 × 8位，每个字节带可编程写保护的EEPROM中）
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte And Two Bytes of Programmable Security Code(1024 x 8位，每个字节带可编程写保护，2字节可编程安全密码的EEPROM) 1024 × 8位的EEPROM，具有可编程写保护对于每一个字节，两个字节可编程保障法024 × 8位，每个字节带可编程写保护，2字节可编程安全密码的EEPROM中）
|
GTM, Corp.
Integrated Silicon Solution, Inc.
|
| FM1008-200DC FM1008-200SC FM1008-200PC FMX1308-200 |
1024-16384-bit nonvolatile static RAM family
1024-16384-bit nonvlatile static ram family
NVRAM (Ferroelectric Based) NVRAM中（基于铁电
|
Ramtron International Corp.
Ramtron International, Corp.
|
| ZL50017 |
1024 x 1024 Channels Selectable Rate (2, 4, 8 Mbps) Non-blocking TDM Switch
|
Zarlink Semiconductor
|
| TH7887AVRH TH7887A |
From old datasheet system
Area Array CCD Image Sensor 1024 x 1024 Pixels with Antiblooming
|
ATMEL Corporation
|
