| PART |
Description |
Maker |
| MID145-12A3 MII145-12A3 |
1200V IGBT module
IGBT Modules: Boost Configurated IGBT Modules
IGBT Modules - Short Circuit SOA Capability Square RBSOA 160 A, 1200 V, N-CHANNEL IGBT
|
IXYS Corporation
IXYS, Corp.
|
| MCC26-16IO1B MCC26-16IO8B MCD26-08IO1B MCD26-08IO8 |
Thyristor Modules Thyristor/Diode Modules 50 A, 1600 V, SCR, TO-240AA
Thyristor Modules Thyristor/Diode Modules 50 A, 800 V, SCR, TO-240AA
Thyristor Modules Thyristor/Diode Modules 50 A, 1400 V, SCR, TO-240AA
Thyristor and Rectifiers Modules
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| VIO125-12P1 VID125-12P1 VDI125-12P1 |
IGBT Modules: Boost Configurated IGBT Modules
IGBT Modules 138 A, 1200 V, N-CHANNEL IGBT
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| VBO65-12NO7 VBO65-16NO7 VBO65-08NO7 VBO65-14NO7 VB |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges
|
IXYS
|
| VBO36-12NO8 VBO36-08NO8 VBO36-16NO8 VBO36-18NO8 VB |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges
|
IXYS
|
| IAC-24E1393028-3 |
Solid State Relays and Input/Output Modules; IAC-24E=IO MODULES ( Potter & Brumfield )
|
Tyco Electronics
|
| MDD312-12N1 L102 MDD312-18N1 MDD312-14N1 MDD312-16 |
Thyristor and Rectifiers Modules
High Power Diode Modules
CAT6A PLENUM, GREEN, SPOOBULK CABLE
|
IXYS Corporation
|
| VBE55-12NO7 |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges with Fast Recovery Diodes
|
IXYS
|
| MC68HC812A4PV MC68HC812A4 |
16-bit device composed of standard on-chip peripheral modules connected by an intermodule bus. Modules include
|
MOTOROLA[Motorola, Inc]
|
| HYS72D64320HU-6-C HYS64D16301HU-5-C HYS64D16301HU- |
DDR SDRAM Modules - 256MB (32Mx64) PC2700 1-bank
184-Pin Unbuffered Dual-In-Line Memory Modules
|
INFINEON[Infineon Technologies AG]
|
| MDD26-18N1B MDD26 MDD26-08N1B MDD26-12N1B MDD26-14 |
Diode Modules
Thyristor and Rectifiers Modules
Diode Modules 36 A, 1400 V, SILICON, RECTIFIER DIODE, TO-240AA
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| RM30TA-H RM30TPM-M RM30TA-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
