| PART |
Description |
Maker |
| BF998A BF998B BF998RA BF998RAW BF998RB BF998RBW BF |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管，耗尽
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
RES,Metal Glaze,33.2Ohms,200WV,1 /-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No
N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Telefunken
VISAY[Vishay Siliconix]
|
| 3SK298ZP-TL-E |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET LEAD FREE, SC-82, CMPAK-4
Silicon N-Channel Dual Gate MOS FET
|
Renesas Electronics Corporation
|
| 3SK296 |
Silicon N-Channel Dual Gate MOS FET
|
HITACHI[Hitachi Semiconductor]
|
| 3SK322 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
| 3SK51 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
| BF901R BF901 |
Silicon n-channel dual gate MOS-FETs
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| NE41137 |
N-Channel GaAs Dual Gate MES FET
N-CHANNEL GAASDUAL-GATE MESFET
|
California Eastern Laboratories
NEC[NEC]
|
| 3SK309 |
Silicon N Channel MOS FET
GaAs N Channel Dual Gate MES FET UHF RF Amplifier
|
Hitachi Semiconductor
|
| MFE211 MFE212 |
N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS N沟道双栅氮化硅钝化马鞍山场效应晶体管
From old datasheet system
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
|
| KK74HCT20A KK74HCT20AD KK74HCT20AN |
Dual 4-Input NAND Gate High-Performance Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
| KK4012B KK4012BD KK4012BN |
Dual 4-Input NAND Gate High-Voltage Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
| KK74ACT21 KK74ACT21D KK74ACT21N |
Dual 4-Input AND Gate High-Speed Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
