| PART |
Description |
Maker |
| BAV19W BAV21W |
410 mW High Voltage SMD Switching Diode
|
Taiwan Semiconductor Company, Ltd
|
| 041063050001WG 041063050002WG 4106309 041063050006 |
Power Relay 410 63 125隆?C
Power Relay 410 63 125°C
|
Tyco Electronics
|
| CMPTA42E CMPTA92E |
SMD Small Signal Transistor PNP High Voltage
ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY HIGH VOLTAGE SILICON TRANSISTORS
|
CENTRAL[Central Semiconductor Corp]
|
| M57716M 57716M M57716 |
Silicon Bipolar Power Amplifier for 410-430 MHz 13W Digital Mobile
Silicon Biporlar Power Amplifier for 410-430MHz 13W Digital Mobile
From old datasheet system
Silicon Bipolar Power Amplifier for 410-430MHz 13W Digital Mobile
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| BZT52B10S BZT52B11S BZT52B12S BZT52B13S BZT52B14S |
20 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
SURFACE MOUNT ZENER DIODE VOLTAGE RANGE 3 to 39 Volts POWER RATING 410 mWatts
6.2 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
|
RECTRON LTD
Rectron Semiconductor
|
| NTE2594 |
Silicon NPN Transistor High Voltage, High Current Switch
|
NTE Electronics
|
| NTE2579 |
Silicon NPN Transistor High Voltage, High Speed Switch
|
NTE[NTE Electronics]
|
| NTE53 |
Silicon NPN Transistor High Voltage, High Speed Switch
|
NTE[NTE Electronics]
|
| AH3372 AH3372-P-A AH3372-P-B AH3372-SA-7 AH3372-W- |
HIGH VOLTAGE HIGH SENSITIVITY HALL EFFECT UNIPOLAR SWITCH
|
Diodes Incorporated
|
| NTE2308 |
Silicon NPN Transistor High Voltage, High Current Switch
|
NTE[NTE Electronics]
|
