| PART |
Description |
Maker |
| TIM4450-12UL |
HIGH POWER P1dB=41.5dBm at 4.4GHz to 5.0GHz
|
Toshiba Semiconductor
|
| TIM7785-4UL09 |
HIGH POWER P1dB=36.5dBm at 7.7GHz to 8.5GHz
|
Toshiba Semiconductor
|
| TIM4450-25UL |
HIGH POWER P1dB=44.5dBm at 4.4GHz to 5.0GHz
|
Toshiba Semiconductor
|
| AWT6106 |
PCS/CDMA 3.5V/28.5dBm Linear Power Amplifier Module
|
ANADIGICS, Inc.
|
| AWT6252M7P8 AWT6252 |
IMT/WCDMA 3.4V/27.5dBm Linear Power Amplifier Module 膜厚 WCDMA.4V/27.5dBm线性功率放大器模块
The AWT6252 meets the increasing demands for higher output power in 3GPP 1XRTT handsets.
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| AWT6275 |
HELP IMT/WCDMA 3.4V/27.5dBm Linear Power Amplifier Module 帮助膜厚 WCDMA.4V/27.5dBm线性功率放大器模块
|
ANADIGICS, Inc.
|
| AWT6388 AWT6388RM20P9 |
450 MHz - 460 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
450 MHz CDMA 3.4V/29.5dBm Linear Power Amplifier Module
|
ANADIGICS INC
ANADIGICS, Inc
|
| MCO500-18IO1 MCO500 MCO500-12IO1 MCO500-14IO1 MCO5 |
1800V high power thyristor module
1600V high power thyristor module
1400V high power thyristor module
1200V high power thyristor module
High Power Thyristor Modules
|
IXYS[IXYS Corporation]
|
| BUX11A |
HIGH CURRENT HIGH POWER HIGH SPEED SILICON N-P-N POWER TRANSISTOR
|
General Electric Solid State
GESS[GE Solid State]
ETC
|
| SML20W65 SML20B56 |
HIGH POWER TERMINATION 56 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
TT electronics Semelab, Ltd.
Seme LAB
|
