| PART |
Description |
Maker |
| NTD12N10-1G NTD12N10G |
Power MOSFET 12 Amps, 100 Volts; Package: DPAK-3 (SINGLE GAUGE); No of Pins: 4; Container: Rail; Qty per Container: 75 12 A, 100 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| MTP27N10E-D |
Power MOSFET 27 Amps, 100 Volts N-Channel TO-220
|
ON Semiconductor
|
| MTB40N10E-D |
Power MOSFET 40 Amps, 100 Volts N-Channel D2PAK
|
ON Semiconductor
|
| MTB33N10E-D |
Power MOSFET 33 Amps, 100 Volts N-Channel D2PAK
|
ON Semiconductor
|
| MTD9N10D MTD9N10E MTD9N10E1 MTD9N10ET4 MTD9N10E-D |
Power MOSFET 9 Amps, 100 Volts N-Channel DPAK
|
ON Semiconductor
|
| NTTD1P02R2-D NTTD1P02R2/D |
Power MOSFET -1.45 Amps-20 Volts
Power MOSFET -1.45 Amps, -20 Volts P-Channel Enhancement Mode Dual Micro8 Package
|
ON Semiconductor
|
| RM912 |
CDMA/AMPS 3-4 Volt Power Amplifier (824-849 MHz)
CDMA/AMPS 3-4 Volt Power Amplifier (824?849 MHz)
|
ETC
Conexant Systems, Inc
|
| NTMD2P01R2 NTMD2P01R2-D |
Power MOSFET -2.3 Amps, -16 Volts Dual SO-8 Package
Power MOSFET -2.3 Amps, -16 Volts Dual SO Package(-2.3A16V，双通道SO-8封装的功率MOSFET) 2.3 A, 16 V, 0.1 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| MTB2P50ET4 MTB2P50ET4G MTB2P50E |
Power MOSFET 2 Amps, 500 Volts(2A, 500V功率MOSFET) 2 A, 500 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET
Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK
|
ON Semiconductor
|
| SPM6M050-010D |
Three-Phase MOSFET BRIDGE 100 VOLT 50 AMP
|
SENSITRON[Sensitron]
|
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