| PART |
Description |
Maker |
| MAAPSS0113TR-3000 MAAPSS0113SMB MAAPSS0113 |
DECT Power Amplifier 1880 - 1930 MHz
|
Tyco Electronics
|
| ITT2206GJ |
3.6V 0.5W RF Power Amplifier IC for DECT
|
M/A-COM / Tyco Electronics
|
| CGY2030M |
DECT 500 mW power amplifier
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| CGY2032TS |
DECT 500 mW power amplifier
|
NXP Semiconductors
Philips Semiconductors
|
| P1935 |
Power Amplifier 1880-1920 MHz 35 dB min. Gain @ 1900MHz
|
PDI[PREMIER DEVICES, INC.]
|
| BFP136 BFP136W |
RF-Bipolar - For power amplifier in DECT and PCN systems
NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| BGF1801-10 |
GSM1800 EDGE power module 1805 MHz - 1880 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PH1819-90 |
Wireless Power Transistor 90 Watts/ 1805-1880 MHz
Wireless Power Transistor 90 Watts, 1805-1880 MHz
|
MACOM[Tyco Electronics]
|
| PH1819-33 |
Wireless Bipolar Power Transistor 33W, 1805-1880 MHz
|
M/A-COM Technology Solutions, Inc.
|
| PTFA180701E PTFA180701F |
Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 鈥?1880 MHz
|
Infineon Technologies AG
|
| PTFA182001E |
Thermally-Enhanced High Power RF LDMOS FET 200 W, 1805 - 1880 MHz
|
Infineon Technologies AG
|
| PTFB183404E PTFB183404F |
High Power RF LDMOS Field Effect Transistors 340 W, 1805 ?1880 MHz
|
Infineon Technologies AG
|
