| PART |
Description |
Maker |
| MC981 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V.
DIODE FOR HIGH SPEED SWICHING APPLICATION SILICON EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| U20DL2C53A |
High Efficiency Diode Stack (HED) Silicon Epitaxial Type Switching Mode Power Supply Application Converter&Chopper Application
TOSHIBA High Efficiency Diode Stack (HED) Silicon Epitaxial Type
|
TOSHIBA[Toshiba Semiconductor]
|
| SSM5G06FE |
Silicon P-Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| MA2B345 |
Silicon epitaxial planar type VHF BAND, 13 pF, 15 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-35
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| MA2B27QB MA2B027 MA2B0270A MA2B0270B MA2B027B MA2B |
Silicon epitaxial planar type variable resistor SILICON, PIN DIODE, DO-35
CANKPT02E16-26SX
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| MA2S367 |
Silicon epitaxial planar type VHF-UHF BAND, 13.25 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
|
PANASONIC[Panasonic Semiconductor]
|
| MA737 MA2Q737 |
Silicon epitaxial planar type 1.5 A, 30 V, SILICON, RECTIFIER DIODE
|
Panasonic, Corp.
Panasonic Semiconductor
|
| SSM5H14F |
Silicon N Channel MOS Type (U-MOS?/Silicon Epitaxial Schottky Barrier Diode
Silicon N Channel MOS Type (U-MOS楼虏)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| KTX401E |
EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE, ULTRA HIGH SPEED SWITCHING) 平面PNP晶体管外延硅外延平面型二极管（通用，超高速开关）
|
KEC Holdings
KEC[KEC(Korea Electronics)]
|
| 1S2095A |
SILICON EPITAXIAL PLANAR TYPE DIODE
|
TOSHIBA[Toshiba Semiconductor]
|
| KDV144EL KDV144EL-15 |
SILICON EPITAXIAL PIN TYPE DIODE
|
KEC(Korea Electronics)
|
