| PART |
Description |
Maker |
| IHW30N90R08 |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IHW20N135R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
| IHW15N120R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IHW30N120R2 |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| FGR3000FX90DA |
THYRISTOR|REVERSE-CONDUCTING|4.5KV V(DRM)|TO-200VAR120 晶闸管|反向导电| 4.5KV五（DRM）的|00VAR120
|
Mitsubishi Electric, Corp.
|
| IXRH40N120 |
IGBT with Reverse Blocking capability
|
IXYS Corporation
|
| IXRA15N120 |
IGBT with Reverse Blocking capability
|
IXYS
|
| FGR3000FX-90DA |
HIGH POWER INVERTER USE PRESS PACK TYPE 大功率逆变器使用的新闻包装
MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS HIGH POWER INVERTER USE PRESS PACK TYPE
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
| ARA2005 ARA2005S8P0 ARA2005S8P1 |
The ARA2005 is a monolithic GaAs device designed to provide the reverse path amplification and output level control functions in ...
Reverse Path Amplifiers
Reverse Amplifier with Step Attenuator
|
Anadigics Inc
ANADIGICS[ANADIGICS, Inc]
|
| STGP7NB60F STGD7NB60FT4 STGD7NB60F |
14 A, 600 V, N-CHANNEL IGBT, TO-220AB
Transient Surge Protection Thyristor; Thyristor Type:Sidac; Package/Case:MS-013; Reel Quantity:1500; Repetitive Reverse Voltage Max, Vrrm:58V; Capacitance:70pF; Forward Voltage:5V; Holding Current:120mA; Leakage Current:5uA RoHS Compliant: NA
N-CHANNEL 7A 600V TO-220/DPAK POWERMESH IGBT
N-CHANNEL 7A - 600V - T0-220 / DPAK PowerMESH IGBT
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| MID145-12A3 MII145-12A3 |
1200V IGBT module
IGBT Modules: Boost Configurated IGBT Modules
IGBT Modules - Short Circuit SOA Capability Square RBSOA 160 A, 1200 V, N-CHANNEL IGBT
|
IXYS Corporation
IXYS, Corp.
|
