| PART |
Description |
Maker |
| STK20C04 STK20C04-W25 STK20C04-W25I STK20C04-W35 S |
512 X 8 NON-VOLATILE SRAM, 35 ns, PDIP28
512 X 8 NON-VOLATILE SRAM, 45 ns, PDIP28
512 x 8 nvSRAM QuantumTrap⑩ CMOS Nonvolatile Static RAM
512 x 8 nvSRAM QuantumTrap CMOS Nonvolatile Static RAM
512 X 8 NON-VOLATILE SRAM, 25 ns, PDIP28
|
Simtek Corporation
|
| CY7C1020CV33-15ZSXE |
512 K (32 K 16) Static RAM
|
Cypress
|
| PUMA68SV16000XB-20 PUMA68SV16000XB-25 PUMA68SV1600 |
512 K x 32 Static RAM
|
MOSAIC
|
| CY62148EV30LL-45ZSXA |
4-Mbit (512 K × 8) Static RAM
|
Cypress Semiconductor
|
| CY62148EV30LL-55ZSXET |
4-Mbit (512 K x 8) Static RAM
|
Cypress
|
| CY7C1049DV33 CY7C1049DV33-10ZSXI CY7C1049DV33-12VX |
4-Mbit (512 K x 8) Static RAM Automatic power down when deselected
|
Cypress Semiconductor
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HM64YLB36514-15 |
16M Synchronous Late Write Fast Static RAM (512-kword × 36-bit, Register-Latch Mode)
|
Renesas Electronics Corporation
|
| HM64YLB36514BP-6H HM64YLB36514 |
16M Synchronous Late Write Fast Static RAM (512-kword × 36-bit, Register-Latch Mode)
16M Synchronous Late Write Fast Static RAM (512-kword 】 36-bit, Register-Latch Mode)
Memory>Fast SRAM>Late Write / High Speed Interface Synchronous SRAM
|
Renesas Electronics Corporation
|
| SST4117A SST4118A |
1-Mb (128K x 8) Static RAM
1-Mbit (64K x 16) Static RAM 晶体管|场效应| N沟道| 80uA电流我（直）| SOT - 23封装
|
Electronic Theatre Controls, Inc.
|
