| PART |
Description |
Maker |
| FCB20N60F12 |
600V N-Channe MOSFET 600V, 20A, 190mΩ
|
Fairchild Semiconductor
|
| OM6233SS OM6227SS OM6233SSV OM6231SS OM6232SS OM62 |
1000V Dual N-Channel MOSFET in a S-6D package
500V Dual N-Channel MOSFET in a S-6D package
400V Dual N-Channel MOSFET in a S-6D package
500V Dual N-Channel MOSFET in a S-6E package
1000V Dual N-Channel MOSFET in a S-6E package
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6D, SIP-6
400V Dual N-Channel MOSFET in a S-6E package 400V双N沟道MOSFET的在一个S - 6E条包
10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6E, SIP-6
|
International Rectifier
Electronic Theatre Controls, Inc.
Atmel, Corp.
|
| IRFY230 IRFY230-QR-BR1 IRFY230-JQR-BR1 |
9 A, 200 V, 0.49 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA HERMETIC SEALED, METAL, TO-257AA, 3 PIN
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
NCHANNEL POWER MOSFET FOR HIREL APPLICATIONS
|
TT electronics Semelab, Ltd.
Seme LAB
|
| IRHYK57133CMSE IRHYK57133CMSEPBF |
20 A, 130 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, TO-257AA, 3 PIN
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (Low-Ohmic TO-257AA)
|
International Rectifier, Corp.
Integrated Device Technology, Inc.
IRF[International Rectifier]
|
| SHD219403 |
HERMETIC POWER MOSFET N-CHANNEL
|
Sensitron
|
| SHD226303 |
HERMETIC POWER MOSFET N-CHANNEL
|
Sensitron
|
| SHD218414 SHD218414A SHD218414B |
HERMETIC POWER MOSFET N-CHANNEL
|
Sensitron
|
| SHD226404 |
HERMETIC POWER MOSFET N-CHANNEL
|
Sensitron
|
| SHD230452 |
HERMETIC POWER MOSFET P-CHANNEL
|
Sensitron
|
| SHD226403 SHD226403R |
HERMETIC POWER MOSFET - N-CHANNEL
|
Sensitron
|
| SHD239502 |
HERMETIC POWER MOSFET N-CHANNEL
|
Sensitron
|
| SHD23100610 |
HERMETIC POWER MOSFET N-CHANNEL
|
Sensitron
|
|
