| PART |
Description |
Maker |
| HY57V561620B HY57V561620BLT-6I HY57V561620BLT-8I H |
SDRAM - 256Mb
4 Banks x 4M x 16Bit Synchronous DRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| IS42S32800D-6TL IS42S32800D-6TLI IS45S32800D-6BLA1 |
8M x 32 256Mb SYNCHRONOUS DRAM
|
Integrated Silicon Solution, Inc
|
| IS42S32800D |
8M x 32 256Mb SYNCHRONOUS DRAM
|
Integrated Silicon Solution
|
| EM48AM1684VTD EM48AM1684VTD-6F EM48AM1684VTD-6FE E |
256Mb (4M?4Bank?16) Synchronous DRAM
256Mb (4M×4Bank×16) Synchronous DRAM
|
Eorex Corporation
|
| EM48AM3244LBB-75FE EM48AM3244LBB-7FE EM48AM3244LBB |
256Mb (2M×4Bank×32) Synchronous DRAM
256Mb (2M】4Bank】32) Synchronous DRAM
|
http://
Eorex Corporation
|
| EM48AM1684VTF-6F EM48AM1684VTF-6FE EM48AM1684VTF-7 |
256Mb (4M×4Bank×16) Synchronous DRAM
|
Eorex Corporation
|
| MT48LC16M16A2 MT48LC32M8A2 MT48LC64M4A2 |
Synchronous DRAM 256Mb: x4, x8, x16 SDRAM
|
Micron Technology
|
| H57V2582GTR |
256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
|
Hynix Semiconductor
|
| H57V2562GTR-50I H57V2562GTR-50J H57V2562GTR-60I H5 |
256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O
|
Hynix Semiconductor
|
| TCS59SM716AFTL-80 TCS59SM716AFTL-70 TCS59SM716AFTL |
2M×4Banks×16Bits Synchronous DRAM(4M×16位同步动态RAM)
8M×4Banks×4Bits Synchronous DRAM(4M×4位同步动态RAM)
4M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 4米4Banks × 8位同步DRAM米8位同步动态RAM）的
8M?4Banks?4Bits Synchronous DRAM(4缁?M?4浣??姝ュ???AM)
SYNCHRONOUS DRAM, PDSO54
|
Toshiba Corporation
Toshiba, Corp.
|
| HY57V561620CLTP-6I HY57V561620CT-SI HY57V561620CLT |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
16M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
SDRAM - 256Mb
|
HYNIX SEMICONDUCTOR INC
|
