PART |
Description |
Maker |
S29GL256S |
1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory
|
Cypress Semiconductor
|
NAND01G-A NAND01GW3A NAND01GW3A0AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
|
AT52SC1283J AT52SC1283J-70CI AT52SC1283J-85CI AT52 |
128-Mbit Flash 32-Mbit/64-Mbit
|
Toshiba Semiconductor ATMEL Corporation
|
M36LLR8760 M36L0R7050 M36L0R7050B0ZAQE M36L0R7050B |
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package 128兆位(多银行,多层次,突发)闪存32兆位00万16)移动存储芯片,1.8V电源多芯片封 CAP 2.2PF 200V 0.5PF C0H DIP-2 BULK S-MIL-C-39014 ER 23C 16 12 8 4 SKT RECP WALL CAP 0.1UF 50V 10% X7R DIP-2 BULK P-MIL-C-39014 128 Mbit (Multiple Bank / Multi-Level / Burst) Flash Memory 32 Mbit (2M x16) PSRAM From old datasheet system
|
STMicroelectronics N.V. ST Microelectronics 意法半导 STMICROELECTRONICS[STMicroelectronics]
|
M36P0R8070E0 M36P0R8070E0ZACE M36P0R8070E0ZACF |
256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package
|
Numonyx B.V
|
HYB25M144180C HYB25R144180C HYB25M128160C |
144-Mbit direct RDRAM(144 Mbit 直接 RDRAM) 144-MBit Direct RDRAM(144 M位直接RDRAM) 144兆位的直接的RDRAM144米位直接的RDRAM 128-Mbit direct RDRAM(128 Mbit ?存? RDRAM)
|
SIEMENS AG
|
M36W0R7050B0 M36W0R7050B0ZAQ M36W0R7050T0 M36W0R70 |
SPECIALTY MEMORY CIRCUIT, PBGA88 128 Mbit (8Mb x16, Multiple Bank, Burst) Flash Memory and 32 Mbit (2Mb x16) PSRAM, 1.8V Supply Multi-Chip Package
|
STMICROELECTRONICS ST Microelectronics
|
CY14B101NA-ZS25XI CY14B101NA-ZS25XIT CY14B101NA-ZS |
1-Mbit (128 K 8/64 K 16) nvSRAM
|
Cypress
|
CY62137EV30LL-45BVXI12 CY62137EV30LL-45ZSXI12 CY62 |
2-Mbit (128 K × 16) Static RAM
|
Cypress Semiconductor
|