| PART |
Description |
Maker |
| AS5SS512K36DQ-8.5_IT AS5SS512K36DQ-8.5_XT AS5SS512 |
512K x 36 SSRAM Flow-Through SRAM No Bus Latency
|
Austin Semiconductor
|
| AS5SS256K18DQ-10/IT AS5SS256K18DQ-10/XT AS5SS256K1 |
256K x 18 SSRAM - synchronous burst SRAM, flow-thru
256K x 18 SSRAM Synchronous Burst SRAM, Flow-Through
256K x 18 SSRAM Synchronous Burst SRAM. Flow-Through 256 × 18的SSRAM同步突发静态存储器。流通过
|
Austin Semiconductor, Inc
|
| AS5SS256K36ADQ-8.5XT AS5SS256K36ADQ-10IT AS5SS256K |
256K x 36 SSRAM - synchronous burst SRAM, flow-thru
|
Austin Semiconductor
|
| AS5SS128K36DQ-11/IT AS5SS128K36DQ-11/XT AS5SS128K3 |
128K x 36 SSRAM - synchronous ZBL SRAM flow-thru output
128K x 36 SSRAM SYNCHRONOUS ZBL SRAM FLOW-THRU OUTPUT
|
Austin Semiconductor
|
| CY7C1371D-100AXI CY7C1371D-100BGI CY7C1373D-100BZI |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 18兆位（为512k × 36/1M × 18）流体系结构，通过与NoBLTM的SRAM
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA119
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| WED9LC6416V2010BI WED9LC6416V2010BC WED9LC6416V201 |
128Kx32 SSRAM/4Mx32 SDRAM Array(128Kx32??????RAM??Mx32????ㄦ?RAM?靛?)
128Kx32 SSRAM/4Mx32 SDRAM Array(128Kx32同步静态RAM4Mx32同步动态RAM阵列) 128Kx32 SSRAM/4Mx32内存阵列28Kx32同步静态内存和4Mx32同步动态内存阵列）
128Kx32 SSRAM/4Mx32 SDRAM 128Kx32 SSRAM/4Mx32内存
128Kx32 SSRAM/4Mx32 SDRAM Array(128Kx32同步静态RAMB>4Mx32同步动态RAM阵列)
|
White Electronic Designs Corporation
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| CY7C1361C-133AXC CY7C1361C-133BGI CY7C1361C-133AJX |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 8.5 ns, PBGA119
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 8.5 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 9兆位56 × 36/512K × 18）流通过的SRAM
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 6.5 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1363C-133AXC |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 512K X 18 CACHE SRAM, 6.5 ns, PQFP100
|
Cypress Semiconductor, Corp.
|
| IDT71V67702S85BG IDT71V67902S85BGI IDT71V67902S75B |
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 8 ns, PBGA119
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 8 ns, PQFP100
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 256K X 36 CACHE SRAM, 7.5 ns, PBGA165
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 8 ns, PBGA165
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 7.5 ns, PQFP100
|
Integrated Device Technology, Inc.
|
| CY7C1383CV25-133BGC CY7C1381CV25-133BGC CY7C1383CV |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
|
Cypress Semiconductor
|
| CY7C1383D-133BZXC CY7C1381D CY7C1381D-100AXC CY7C1 |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
|
CYPRESS[Cypress Semiconductor]
|
