| PART |
Description |
Maker |
| XSDT306TR XSDT306TS XSDT306TP XSDT306TK |
THYRISTOR|REVERSE-CONDUCTING|1.8KV V(DRM)|DO-200VAR142
THYRISTOR|REVERSE-CONDUCTING|1.9KV V(DRM)|DO-200VAR142
THYRISTOR|REVERSE-CONDUCTING|1.7KV V(DRM)|DO-200VAR142
THYRISTOR|REVERSE-CONDUCTING|1.5KV V(DRM)|DO-200VAR142
|
|
| IHW40N120R3 |
Reverse conducting IGBT
|
Infineon
|
| IHW40N65R5-15 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
| 5SHX14H4510 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
| IKW50N65WR5-15 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
| IHD10N60RA |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IHW15N120R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| 5SHX06F6010 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
| 5SHX26L4510 |
Reverse Conducting Integrated Gate-Commutated Thyristor 1590 A, 4500 V, SCR
|
The ABB Group
ABB, Ltd.
|
| IKW15T120 IKW15T12008 |
TrenchStop Series
|
http://
Infineon Technologies AG
|
| IGW40N65H5 PG-TO220-3 PG-TO247-3 |
High speed 5 IGBT in TRENCHSTOP 5 technology
|
Infineon Technologies AG
|
| IGB30N60T |
Low Loss IGBT in TrenchStop and Fieldstop technology
|
Infineon Technologies A...
|
