| PART |
Description |
Maker |
| BSC052N03S |
OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| IPSH5N03LA |
OptiMOS2 Power-Transistor
|
Infineon Technologies
|
| IPP05CN10LG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
| IPP16CN10LG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
| IPP13N03LBG IPP13N03LBG08 |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
| IPF12N03LBG |
OptiMOS2 Power-Transistor 的OptiMOS2功率晶体
|
Infineon Technologies AG
|
| BSL205N |
OptiMOS2 Small-Signal-Transistor
|
Infineon Technologies AG
|
| BSL202SN |
OptiMOS2 Small-Signal-Transistor
|
Infineon Technologies AG
|
| BSB019N03LXG |
OptiMOS2 Power-MOSFET
|
Infineon Technologies AG
|
| IPU07N03LA |
OptiMOS®2 - Power packages OptiMOS2 Power MOSFET. 25V. TO251. RDSon = 6.5mOhm. 30A. LL ?的OptiMOS功率MOSFET25V的TO251。导通状态\u003d 6.5mOhm30A条。当地雇员?
|
Infineon Toshiba, Corp.
|