| PART |
Description |
Maker |
| AS1506-50 AS1506-10 AS1506-100 |
256-Tap Digital Potentiometer with SPI Interface and High Endurance EEPROM
|
austriamicrosystems AG
|
| AS1507-BTDT-10 AS1507-BTDT-100 AS1507-100 AS1507-5 |
Dual 256-Tap Digital Potentiometer with SPI Interface and High Endurance EEPROM
|
http:// austriamicrosystems AG
|
| ST1305 4379 ST1305-W2 ST1305-U |
From old datasheet system High Endurance CMOS 192 bit EEPROM With Secure Logic Access Control
|
STMICROELECTRONICS[STMicroelectronics]
|
| ST1305 ST1305DW4/CTAD |
Memory Card IC 192 bit High Endurance EEPROM With Secure Logic Access Control and Inlock System
|
ST Microelectronics
|
| DS1630YL-120 DS1630YL-120-IND DS1630YL-70-IND DS16 |
32K X 8 NON-VOLATILE SRAM MODULE, 120 ns, PDSO34 LOW PROFILE, SMT-34 32K X 8 NON-VOLATILE SRAM MODULE, 120 ns, DSO34 32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DSO34 32K X 8 NON-VOLATILE SRAM MODULE, 120 ns, PDIP28 32K X 8 NON-VOLATILE SRAM MODULE, 100 ns, PDIP28
|
Maxim Integrated Products, Inc. MAXIM INTEGRATED PRODUCTS INC
|
| DS1345YL-70-IND DS1345YL-100IND |
128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34 128K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DFP34 128K X 8 NON-VOLATILE SRAM MODULE, 100 ns, PDSO34 LOW PROFILE, SMT-34 128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDSO34
|
Maxim Integrated Products, Inc.
|
| CY14B101LA-SZ45XI CY14B101LA-SZ45XC CY14B101LA-SZ4 |
128K X 8 NON-VOLATILE SRAM, 20 ns, PDSO48 128K X 8 NON-VOLATILE SRAM, 45 ns, PDSO48 128K X 8 NON-VOLATILE SRAM, 25 ns, PDSO32 128K X 8 NON-VOLATILE SRAM, 20 ns, PDSO32 1 Mbit (128K x 8/64K x 16) nvSRAM
|
CYPRESS SEMICONDUCTOR CORP http://
|
| 1688094 |
Total Endurance v5.00 Quick Start Guide
|
Microchip Technology
|
| CY14B104M-ZSP25XI |
Non-Volatile Static RAM (nvSRAM); Organization: 256x16; Density: 4MB; Speed: 25ns; Supply Voltage: 3V; Temperature Range: -40° to 85°C; Package: 54-TSOP-II ; Features: Real-Time Clock 256K X 16 NON-VOLATILE SRAM, 25 ns, PDSO54
|
Cypress Semiconductor, Corp.
|
| STK14C88-3 STK14C88-3NF35 STK14C88-3NF35I STK14C88 |
256 Kbit (32K x 8) AutoStore nvSRAM Unlimited Read/Write endurance
|
Cypress Semiconductor
|
| DS1730YLPM-150IND DS1730YLPM-200IND DS1730YLPM-150 |
32K X 8 NON-VOLATILE SRAM MODULE, 150 ns, DFP34 32K X 8 NON-VOLATILE SRAM MODULE, 200 ns, DFP34 32K X 8 NON-VOLATILE SRAM MODULE, 150 ns, PDFP34
|
Maxim Integrated Products, Inc. DALLAS SEMICONDUCTOR
|
| EP1K50TC144-1DX EP1K50TI144-1DX EP1K50FC484-2F EP1 |
Single Volatile 32-Tap Digitally Controlled Potentiometer (XDCP); Temperature Range: -40°C to 85°C; Package: 5-SOT-23 T&R Single Volatile 32-Tap Digitally Controlled Potentiometer (XDCP); Temperature Range: -40°C to 85°C; Package: 6-SC-70 T&R Single Volatile 32-Tap Digitally Controlled Potentiometer (XDCP); Temperature Range: -40°C to 85°C; Package: 6-SOT-23 T&R Dual LDO with Low Noise, Low IQ, and High PSRR; Temperature Range: -40°C to 85°C; Package: 10-DFN Single Volatile 32-Tap Digitally Controlled Potentiometer (XDCP); Temperature Range: -40°C to 85°C; Package: 5-SC-70 T&R Field Programmable Gate Array (FPGA) 现场可编程门阵列(FPGA Field Programmable Gate Array (FPGA) 现场可编程门阵列FPGA Single Volatile 32-Tap Digitally Controlled Potentiometer (XDCP™); Temperature Range: -40°C to 85°C; Package: 6-SC-70 T&R 现场可编程门阵列(FPGA Single Volatile 32-Tap Digitally Controlled Potentiometer (XDCP™); Temperature Range: -40°C to 85°C; Package: 5-SOT-23 T&R
|
Taiyo Yuden Co., Ltd. Nihon Inter Electronics, Corp. Vectron International, Inc. Samsung Semiconductor Co., Ltd.
|