| PART |
Description |
Maker |
| MTP10N60E7 ON2541 MTP10N60E7-D |
TMOS 7 E-FET™ High Energy Power FET
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| ADE7768AR-REF ADE7768ARZ-RL ADE7768AR-RL |
Energy Metering IC with Integrated Oscillator and Positive Power Accumulation 电能计量IC整合的振荡器和积累的积极力量
Energy Metering IC with Integrated Oscillator and Positive Power Accumulation 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO16
|
Analog Devices, Inc.
|
| CS5464-IS |
Three-channel, Single-phase Power/Energy IC
|
Cirrus Logic, Inc.
|
| IRF533 |
(IRF530 - IRF533) N-Channel Power MOSFETs Avalanche Energy Rated
|
Harris Corporation
|
| IRF5M4905 IRF5M4B905 |
Avalanche Energy Ratings
THRU-HOLE (TO-254AA) 55V, P-CHANNEL
POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.03ohm, Id=-35A*)
|
International Rectifier
|
| IRFP360 IRFP362 |
Avalanche-Energy-Rated N-Channel Power MOSFETs
Avalanche-Energy-Rated N-Channel Power MOSFETs
|
New Jersey Semi-Conduct...
|
| PHP10N60E |
PowerMOS transistors Avalanche energy rated 9.6 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| MAL222091001E3 MAL222090004E3 |
Electrical Double Layer Energy Storage Capacitors Power and Energy Versions
|
Vishay Siliconix
|
| IRF5NJ6215 |
Avalanche Energy Ratings
POWER MOSFET P-CHANNEL(Vdss=-150V, Rds(on)=0.29ohm, Id=-11A)
-150V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package
|
International Rectifier
|
| MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
| MTP3N50E MTP3N50E_D ON2604 MTP3N50 MTP3N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS
From old datasheet system
|
ON Semiconductor
Motorola, Inc.
|
