| PART |
Description |
Maker |
| H20R1202 |
Reverse Conducting IGBT
|
Infineon Technologies
|
| IHW30N90R08 |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IHD06N60RA |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IKW50N65WR5-15 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
| IHD10N60RA |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IHW15N120R |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IHW20N120R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IHW30N90R |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IHY30N160R2 |
TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode
|
Infineon Technologies AG
|
| DGT304RE DGT304RE13 |
Reverse Blocking Gate Turn-off Thyristor 390 A, 1300 V, REVERSE CONDUCTING GTO SCR
|
Dynex Semiconductor, Ltd. Dynex Semiconductor Ltd. DYNEX[Dynex Semiconductor]
|
| 5SHX03D6004 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
| FGR3000FX90DA |
THYRISTOR|REVERSE-CONDUCTING|4.5KV V(DRM)|TO-200VAR120 晶闸管|反向导电| 4.5KV五(DRM)的|00VAR120
|
Mitsubishi Electric, Corp.
|