| PART |
Description |
Maker |
| M74HC4852B1R M74HC4852MW M74HC4852MWR |
DUA 4:1 CHANNEL ANALOG MUX/DMUX WITH INJECTION CURRENT PROTECTION
|
ST Microelectronics
|
| 45660-0001 0456600001 |
7.50mm (.295) Power Dock Plug 250V, Gold Zone Both Sides of Blade, 1 Circuit, 0.75μm (30μ) Select Gold (Au)
|
Molex Electronics Ltd.
|
| 0740268112 74026-8112 |
2.00mm (.079") Pitch VHDM庐 Board-to-Board Daughtercard Receptacle, Right Angle8-Row, 3 Blade Power Module, 3 Circuits, Mating Blade Length: 7.50mm (.295") Blade
2.00mm (.079) Pitch VHDM? Board-to-Board Daughtercard Receptacle, Right Angle8-Row, 3 Blade Power Module, 3 Circuits, Mating Blade Length: 7.50mm (.295) Blade
|
Molex Electronics Ltd.
|
| 0740268114 74026-8114 |
2.00mm (.079") Pitch VHDM庐 Board-to-Board Daughtercard Receptacle, Right Angle8-Row, 3 Blade Power Module, 3 Circuits, Mating Blade Length: 7.50mm (.295") Blade
2.00mm (.079) Pitch VHDM? Board-to-Board Daughtercard Receptacle, Right Angle8-Row, 3 Blade Power Module, 3 Circuits, Mating Blade Length: 7.50mm (.295) Blade
|
Molex Electronics Ltd.
|
| 370910 39374-0910 0393740910 |
7.50mm (.295") Beau垄芒 Eurostyle垄芒 Pluggable PCB Terminal Block, 270隆? Wire Entry, 10 Circuits
7.50mm (.295) Beau Eurostyle Pluggable PCB Terminal Block, 270° Wire Entry, 10 Circuits
|
Molex Electronics Ltd.
|
| VUM33-05N VUM33-05 IXYSCORP-VUM33-05N |
Power MOSFET Stage for Boost Converters 47 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
Power Factor Correction Modules: MOSFET
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| AM29LV010B-45RJC AM29LV010B-55JC AM29LV010B-55JE A |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET ST Package
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
80V Single N-Channel HEXFET Power MOSFET in a SO-8 package
-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
20V Dual N-Bidirectional HEXFET Power MOSFET in a 6-Lead FlipFET
30V N-Channel PowerTrench MOSFET 30VN沟道的PowerTrench MOSFET
-12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package x8闪存EEPROM
1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 3V PROM, 70 ns, PQCC32
x8 Flash EEPROM x8闪存EEPROM
|
Toshiba, Corp.
Advanced Micro Devices, Inc.
Spansion, Inc.
|
| IRFZ44VL IRFZ44VS IRFZ44VSTRR |
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=60V, Rds(on)=16.5mohm, Id=55A)
(IRFZ44VL / IRFZ44VS) Power MOSFET
|
IRF[International Rectifier]
|
| 74026-8111 0740268111 |
2.00mm (.079) Pitch VHDM? Board-to-Board Daughtercard Receptacle, Right Angle8-Row, 3 Blade Power Module, 3 Circuits, Mating Blade Length: 7.50mm (.295) Blade
|
Molex Electronics Ltd.
|
| MTP6N60EWC MTP6P20EW MTP6P20EWC MTP3N100E16 MTP3N1 |
6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
6 A, 200 V, 1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
8 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
33 A, 100 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
15 A, 50 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
12 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
15 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
50 A, 50 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
20 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Motorola Mobility Holdings, Inc.
MOTOROLA INC
|
| VRF148A VRF148AMP VRF148A10 |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 30; P(in) (W): 1; Gain (dB): 15; VDD (V): 50; Coss (pF): 35; Case Style: M113 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER VERTICAL MOSFET
|
Microsemi, Corp.
Microsemi Corporation
|
| NTB90N02 NTB90N02T4 NTP90N02 |
Power MOSFET 90 Amps / 24 Volts
TV 18C 14#22D 4#8(TWINAX) PIN 90 A, 24 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 90 Amps, 24 Volts
Power MOSFET 90 Amps 24 Volts
|
ONSEMI[ON Semiconductor]
|
|
