| PART |
Description |
Maker |
| IXBH16N170A IXBT16N170A |
Discrete IGBTs
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
High Voltage High Gain BIMOSFET Monolithic Bipolar MOS Transistor
High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS[IXYS Corporation]
|
| IXBH28N170A |
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| ECN3061 |
High Voltage Monolithic IC
|
Renesas Technology
|
| TPD4105AK07 |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4113AK |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| LDNC |
High Voltage Monolithic Inverter and Dual Boost
|
Linear Technology
|
| LT3512 |
Monolithic High Voltage Isolated Flyback Converter
|
Linear Technology
|
| LT3511HMSPBF LT3511HMSTRPBF |
Monolithic High Voltage Isolated Flyback Converter
|
Linear Technology
|
| LT3587EUDPBF LT3587EUDTRPBF |
High Voltage Monolithic Inverter and Dual Boost
|
Linear Technology
|
| 2EX103K1 |
High Voltage Capacitors Monolithic Ceramic Type
|
Semtech
|
| LS301-14 |
HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS
|
Linear Integrated Syste...
|
