| PART |
Description |
Maker |
| IXBH16N170A IXBT16N170A |
Discrete IGBTs High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor High Voltage High Gain BIMOSFET Monolithic Bipolar MOS Transistor High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS[IXYS Corporation]
|
| IXBT24N170 |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| ECN3067 |
High Voltage Monolithic IC
|
Renesas Technology
|
| ECN3063 |
High Voltage Monolithic IC
|
Renesas Technology
|
| TPD4105K |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4113K07 |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4105AK |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4144AK |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| LDNC |
High Voltage Monolithic Inverter and Dual Boost
|
Linear Technology
|
| LT3651-4.2 |
Monolithic 4A High Voltage Li-Ion Battery Charger
|
Linear Technology
|