| PART |
Description |
Maker |
| FSAV430MTCX FSAV430QSCX |
Low Voltage Ultra Low Power High Bandwidth (1.1GHz) Quad SPDT Video Switch
|
Fairchild Semiconductor
|
| D10040240GT |
40 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
GaAs Power Doubler, 40 - 1000MHz, 24.0dB min. Gain @ 1GHz, 375mA max. @ 24VDC
|
RF MICRO DEVICES INC
PREMIER DEVICES, INC.
|
| CVCSO-914-1000 |
Ultra-Low Phase Noise 1GHz SAW VCSO
Ultra-Low Phase Noise 1GHz SAW VCSO
|
Crystek Corporation
|
| D2282UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(750W-6V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应750W-6V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| SA620DK SA620 |
Low voltage LNA mixer and VCO - 1GHz
Low voltage LNA, mixer and VCO - 1GHz
|
PHILIPS[Philips Semiconductors]
|
| SA631DK SA631 |
1GHz low voltage LNA and mixer
From old datasheet system
|
PHILIPS[Philips Semiconductors]
|
| EIA1718A-1P |
17.3-18.1GHz, 1W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIB1718A-2P |
17.3-18.1GHz, 2W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIB1718A-1P |
17.3-18.1GHz, 1W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| D2201 D2201UK D2029UK D2030 D2030UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应2.5W-12.5V-1GHz,单端)
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
| AM42-0039_1 AM42-0039 AM42-00391 |
2Watt C-Band VSAT Power Amplifier 5.9-7.1GHz
|
MACOM[Tyco Electronics]
|
