| PART |
Description |
Maker |
| L8231 L8231-21 L8231-22 L8231-23 L8231-32 L8231-44 |
2V; 0.2mW; laser diode: repectacle type, 1.3um, 1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit ethernet, HDTV, SDH
Receptacle type, 1.3 レm, 1.25, 2.5 Gbps 插座类型.3レ米.25.5 Gbps
CAP 1.5PF 50V /-0.25PF C0G SMD-0402 TR-7-PA SN100 插座类型.3レ米.25.5 Gbps
Receptacle type/ 1.3 m/ 1.25/ 2.5 Gbps
Receptacle type, 1.3 m, 1.25, 2.5 Gbps
Receptacle type 1.3 m 1.25 2.5 Gbps
Receptacle type, 1.3 μm, 1.25, 2.5 Gbps
FIBER OPTIC LASER DIODE EMITTER, 1250Mbps, PANEL MOUNT, SC CONNECTOR
|
Hamamatsu Photonics K.K.
HAMAMATSU[Hamamatsu Corporation]
|
| LA0224CS |
PN type Photo Diode For Optical Disk Blue-purple Laser Diode monitors
|
Sanyo Semicon Device
|
| ENA1001A LA0225CS |
PN type Photo Diode For Optical Disk Blue-purple Laser Diode monitors
|
Sanyo Semicon Device
|
| NX7537BF-AA |
LASER DIODE 1 550 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6314EH |
LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS
|
Renesas Electronics Corporation
|
| NX6240GP |
LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION
|
Renesas Electronics Corporation
|
| NX6514EH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
| NX8349XK NX8349YK NX8349TS |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
| DL-3150-106 |
Infrared Laser Diode (Frame Type)
|
SANYO[Sanyo Semicon Device]
|
| 7001218 700624 700610 700530 |
3M Moisture Barrier Bag Dri-Shield 2000
3M Moisture Barrier Bag Dri-Shield 2000
|
3M Electronics
|
| DL-3148-033 |
Red Laser Diode Index Guided AlGaInP Laser Diode
|
Sanyo Semiconductor
|
