| PART |
Description |
Maker |
| W27L010 W27L010-12 W27L010-90 W27L010P-12 W27L010P |
128K 8 ELECTRICALLY ERASABLE EPROM 128K X 8 EEPROM 12V, 90 ns, PDSO32
128K ′ 8 ELECTRICALLY ERASABLE EPROM
128K 8 ELECTRICALLY ERASABLE EPROM
128K ? 8 ELECTRICALLY ERASABLE EPROM
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
| BR24L02-W BR24L02F-W BR24L02FJ-W BR24L02FV-W BR24L |
256x8 bit electrically erasable PROM 256x8位电可擦除可编程ROM
256×8 bit electrically erasable PROM
256?8 bit electrically erasable PROM
|
Rohm Co., Ltd.
Rohm CO.,LTD.
|
| BR24L32 BR24L32FV-W BR24L32FJ-W BR24L32F-W BR24L32 |
4k8 bit electrically erasable PROM
4k】8 bit electrically erasable PROM
|
ROHM[Rohm]
|
| ATF1500A ATF1500AL |
1500 gate electrically erasable CPLD, 5V, 44 pins
1500 gate electrically erasable low power CPLD, 5V, 44 pins
|
Atmel
|
| 24LC32AX 24AA32A 24LC32AT-I_SM 24LC32AT-I_SMG 24LC |
The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I<SUP>2</SUP>C™ compatible 2-wire serial ...
The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I2C™ compatible 2-wire serial interface bus. The 24AA32A features a page-write capability of up to 32 bytes of data and is capable of both r
32K I2C Serial EEPROM
The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I2C™ compatible 2-wire serial ...
32KIC Serial EEPROM
32K 1.8V I2C Serial EEPROM
|
MICROCHIP[Microchip Technology]
|
| BR24L01A-W BR24L01AFJ-W BR24L01AFV-W BR24L01AFVM-W |
128×8 bit electrically erasable PROM
128 bit electrically erasable PROM 128位电可擦除可编程ROM
|
Rohm Co., Ltd.
Rohm CO.,LTD.
|
| 28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
| W27C010 |
128K X 8 ELECTRICALLY ERASABLE EPROM
|
Winbond
|
| BR24L32F-W BR24L32-W BR24L32FJ-W |
4k×8 bit electrically erasable PROM
|
Rohm
|
| W27LE520W-70 W27LE520W-90 W27LE520 W27LE520S-70 W2 |
64K X 8 ELECTRICALLY ERASABLE EPROM
|
Winbond
|
| LVT16V8-6A LVT16V8-6DB |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
|
NXP Semiconductors N.V.
|
| PALCE20RA10H-7JI PALCE20RA10H-20JI PALCE20RA10H-20 |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
|
Amphenol, Corp.
|
