| PART |
Description |
Maker |
| IGC99T120T6RM |
IGBT4 Medium Power Chip
|
Infineon Technologies AG
|
| IGC50T120T6RL |
IGBT4 Low Power Chip
|
Infineon Technologies AG
|
| IGC11T120T6L |
IGBT4 Low Power Chip
|
Infineon Technologies AG
|
| IGC18T120T6L |
IGBT4 Low Power Chip
|
Infineon Technologies AG
|
| IGC142T120T6RH |
IGBT4 High Power Chip
|
Infineon Technologies AG
|
| 2SD1664 2SD1858 A5800362 2SD1664P 2SD1664T100Q 2SD |
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
Medium Power Transistor (32V/ 1A)
Medium Power Transistor (32V, 1A)
From old datasheet system
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
Littelfuse
Rohm CO.,LTD.
ROHM[Rohm]
|
| IDC28D120T6M |
Diode EMCON 4 Medium Power Chip
|
Infineon Technologies AG
|
| AT-42010 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip(高达6 GHz中等功率硅双极型晶体 GHz中等功率硅双极晶体管芯片（高 GHz的中等功率硅双极型晶体管
|
Agilent(Hewlett-Packard)
HIROSE ELECTRIC Co., Ltd.
|
| APT40GL120JU3 |
ISOTOP? Buck chopper Trench Field Stop IGBT4 Power module
ISOTOP垄莽 Buck chopper Trench Field Stop IGBT4 Power module
|
Microsemi Corporation
|
| INA-34063 |
3.0 GHz Medium Power Silicon RFIC Amplifier(3.0 GHz中等功率硅射频集成电路放大器)
3V Fixed Gain. Medium Power Amplifier
3.0 GHz的中功率硅射频放大器.0千兆赫中等功率硅射频集成电路放大器）
|
Agilent(Hewlett-Packard)
|
| APTGL60A120T1G |
Phase leg Trench Field Stop IGBT4 Power module
|
Microsemi Corporation
|
