| PART |
Description |
Maker |
| SGD04N60 |
Fast S-IGBT in NPT-technology( NPT 技术中的快S-IGBT) 9.4 A, 600 V, N-CHANNEL IGBT, TO-252AA
|
Infineon Technologies AG
|
| SIGC12T60SNC |
IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient
|
Infineon Technologies AG
|
| SIGC07T60SNC |
IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient
|
Infineon Technologies AG
|
| SGP15N120 |
Fast S-igbt in Npt-technology
|
Infineon Technologies Corporation
|
| SGB15N12007 |
Fast IGBT in NPT-technology
|
Infineon Technologies AG
|
| SKW30N6008 |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
|
Infineon Technologies AG
|
| SKP02N120 SKB02N120 |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Fast IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode
|
INFINEON[Infineon Technologies AG]
|
| SKP06N60 SKB06N60 Q67040-S4230 Q67040-S4231 |
Fast S-IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
|
INFINEON[Infineon Technologies AG]
|
| SGB30N6009 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB02N12007 SGB02N120 |
Fast IGBT in NPT-technology Lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB10N60A07 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
