| PART |
Description |
Maker |
| IC43R16160-7T |
4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM
|
Integrated Circuit Solu...
|
| W9412G6CH |
2M 】 4 BANKS 】 16 BITS DDR SDRAM
|
Winbond
|
| W9425G6EH0812 |
4 M × 4 BANKS × 16 BITS DDR SDRAM
|
Winbond
|
| W9464G6JH |
1M ?4 BANKS ?16 BITS DDR SDRAM
|
Winbond
|
| W981616AH W981616AHB1 |
512 x 2 Banks x 16 Bits SDRAM
512K x 2 BANKS x 16 BIT SDRAM
From old datasheet system
|
Winbond Electronics
|
| HY5DU561622DTP HY5DU561622DLTP HY5DU561622DLTP-K H |
DDR SDRAM - 256Mb
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM)
|
HYNIX[Hynix Semiconductor]
|
| EBD11ED8ABFB-6B EBD11ED8ABFB-7B EBD11ED8ABFB-7A |
1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words ?72 bits, 2 Banks)
|
Elpida Memory
|
| 72SD3232RPFE 72SD3232RPFI 72SD3232RPFK 72SD3232RPF |
1 Gbit SDRAM 32-Meg X 32-Bit X 4-Banks 32M X 32 SYNCHRONOUS DRAM, 6 ns, DFP72
1 Gbit SDRAM 32-Meg X 32-Bit X 4-Banks 1千兆位SDRAM2梅格× 32位4，银
|
http://
Maxwell Technologies, Inc
|
| EDE1104AASE-5C-E EDE1108AASE-5C-E EDE1104AASE-6E-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. 256M X 4 DDR DRAM, 0.6 ns, PBGA68
|
Elpida Memory, Inc.
|
| ASM4SSTVF32852 ASM4SSTVF32852-114BT ASM4ISSTVF3285 |
DDR 24-Bit to 48-Bit Registered Buffer
SSTV SERIES, POSITIVE EDGE TRIGGERED D FLIP-FLOP, TRUE OUTPUT, PBGA114
Specialty Clock Management
2.3 V -2.7 V, DDR 24-bit to 48-bit registered buffer
|
Alliance Semiconductor ...
ALSC[Alliance Semiconductor Corporation]
|
| W946432AD W946432A |
SDRAM 2Mx32
512K X 4 BANKS X 32 BITS DDR SDRAM
|
Winbond Electronics
WINBOND[Winbond]
|
