| PART |
Description |
Maker |
| RT3YB7M |
Composite Transistor For Muting Application
|
Isahaya Electronics Corporation
|
| 2SA195507 2SA1955 |
General Purpose Amplifier Applications Switching and Muting Switch Application
|
Toshiba Semiconductor
|
| 2SC4213 E000917 |
FOR MUTING AND SWITCHING APPLICATIONS
From old datasheet system
NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHIG APPLICATIONS)
|
Toshiba Corporation
|
| 2SC4851 |
NPN Epitaxial Planar Silicon Transistor Muting Circuits
|
Sanyo
|
| 2SC4909 |
NPN Epitaxial Planar Silicon Transistor Muting Circuits, Drivers
|
SANYO
|
| KTC2874 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(FOR MUTING AND SWITCHING)
|
KEC(Korea Electronics)
|
| 2SA1965 |
PNP Epitaxial Planar Silicon Transistor for Muting Circuit Applications(用于噪声抑制电路的PNP硅外延平面型晶体
|
Sanyo Electric Co.,Ltd.
|
| 2SC4213 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications
|
TOSHIBA
|
| BC846UF |
NPN Silicon Transistor (General purpose application Switching application)
|
AUK[AUK corp]
|
| BC848F |
NPN Silicon Transistor (General purpose application Switching application)
|
AUK[AUK corp]
|
| BC848U |
NPN Silicon Transistor (General purpose application Switching application)
|
AUK[AUK corp]
|
| BC856F |
PNP Silicon Transistor (General purpose application Switching application)
|
AUK[AUK corp]
|
