| PART |
Description |
Maker |
| CY25CAJ-8F CY25CAJ-8F-T13 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| RJP4003ASA-0-Q0 RJP4003ASA |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| RJP4301APP-M0-15 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| RJP4002ANS RJP4002ANS-00-Q1 |
400 V, N-CHANNEL IGBT 3 X 4.40, 0.65 MM HEIGHT, ULTRA SMALL, PLASTIC, VSON-8
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| CY25AAJ-8 CY25AAJ-8F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
Nch IGBT for STROBE FLASHER
|
Mitsubishi Electric Corporation
POWEREX [Powerex Power Semiconductors]
POWEREX[Powerex Power Semiconductors]
|
| GT25G102 |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| GT20G101 E001912 |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| GT20G101SM E001913 |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| CY25BAH-8F CY25BAH-8F-T13 |
D-Subminiature Connector; Gender:Female; Number of Contacts:80; Contact Termination:IDC; Body Material:Steel; Contact Plating:Nickel; Leaded Process Compatible:No; Mounting Type:PC Board; Peak Reflow Compatible (260 C):No
NCH IGBT FOR STROBE FLASHER
Transistors>IGBT>for Stlobe use
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| GT20G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
| GT8G121 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
