| PART |
Description |
Maker |
| M12S16161A-15T M12S16161A-15TG |
512K x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| M52S16161A-10TG M52S16161A-8BG |
512K x 16Bit x 2Banks Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 9 ns, PDSO50
512K x 16Bit x 2Banks Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA60
|
Elite Semiconductor Memory Technology, Inc.
|
| 325-5M-15 305-5M-15 1595-5M-15 575-5M-15 480-8M-20 |
RIEMEN SYNCHRON HTD L 325MM B 15MM
RIEMEN SYNCHRON HTD L 305MM B 15MM
RIEMEN SYNCHRON HTD L 575MM B 15MM
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits
RIEMEN SYNCHRON HTD L 480MM B 30MM
RIEMEN SYNCHRON HTD L 560MM B 200MM
RIEMEN SYNCHRON HTD L 600MM B 200MM
Dual/Triple-Voltage µP Supervisory Circuits
RIEMEN SYNCHRON HTD L 640MM B 200MM
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits
Low-Noise, Low-Dropout, 150mA Linear Regulators with '2982 Pinout
RIEMEN SYNCHRON HTD L 720MM B 30MM
3-1/2 Digit A/D, BCD, -40C to 85C, 24-PDIP 600mil, TUBE
RIEMEN SYNCHRON HTD L 880MM B 200MM
RIEMEN SYNCHRON HTD L 960MM B 200MM
RIEMEN SYNCHRON HTD L 960MM B 30MM
RIEMEN SYNCHRON HTD L 1040MM B 200MM
RIEMEN SYNCHRON HTD L 450MM B 15MM
300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit
2-Wire-Interfaced 8-Bit I/O Port Expander with Reset
Ultra-Low-Power Voltage Detectors and µP Supervisory Circuits
1.2A Dual MOSFET Drvr, 0C to 70C, 8-PDIP, TUBE
RIEMEN SYNCHRON HTD L 1100MM B 15MM
RIEMEN SYNCHRON HTD L 980MM B 15MM
RIEMEN SYNCHRON HTD L 1800MM B 15MM
RIEMEN SYNCHRON HTD L 1120MM B 30MM
RIEMEN SYNCHRON HTD L 1120MM B 200MM
RIEMEN SYNCHRON HTD L 1200MM B 200MM
RIEMEN SYNCHRON HTD L 1260MM B 200MM
RIEMEN SYNCHRON HTD L 1600MM B 200MM
RIEMEN SYNCHRON HTD L 1440MM B 200MM
RIEMEN SYNCHRON HTD L 1440MM B 30MM
RIEMEN SYNCHRON HTD L 1040MM B 30MM
RIEMEN SYNCHRON HTD L 1420MM B 15MM
RIEMEN SYNCHRON HTD L 1600MM B 30MM
RIEMEN SYNCHRON HTD L 1270MM B 15MM
RIEMEN SYNCHRON HTD L 1200MM B 30MM
RIEMEN SYNCHRON HTD L 890MM B 15MM 里门的SYNCHRON HTD890MM15毫米
RIEMEN SYNCHRON HTD L 1595MM B 15MM 里门的SYNCHRON HTD595MM5毫米
RIEMEN SYNCHRON HTD L 560MM B 30MM 里门的SYNCHRON HTD560MM0毫米
RIEMEN SYNCHRON HTD L 880MM B 30MM 里门的SYNCHRON HTD80┨乙30毫米
|
TE Connectivity, Ltd.
Amphenol, Corp.
Rubycon, Corp.
|
| M12L32162A-5.5BG M12L32162A09 M12L32162A-5.5TG M12 |
1M x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| M52S32162A-10BIG M52S32162A-10TIG M52S32162A-7.5BI |
1M x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| RMS132UAF-10E RMS132UAF-6E RMS132UAF-75E |
512K x 32Bits x 2Banks Low Power Synchronous DRAM
|
Emerging Memory & Logic Solutions Inc
|
| RMS132UAW-10E RMS132UAW-6E RMS132UAW-75E RMS132UAW |
512K x 32Bits x 2Banks Low Power Synchronous DRAM
|
Emerging Memory & Logic Solutions Inc
|
| EM411M1612VTA EM404M1614VTA EM404M1612VTA EM402M16 |
16Mb ( 2Banks ) Synchronous DRAM 16兆（2Banks）同步DRAM
|
Electronic Theatre Controls, Inc.
|
| K4S161622D K4S161622D-TC/L10 K4S161622D-TC/L55 K4S |
512K x 16Bit x 2 Banks Synchronous DRAM
|
Samsung Electronic
Samsung semiconductor
|
| R1LV0816ASB-5SI R1LV0816ASB-7SI |
8Mb Advanced LPSRAM (512k word x 16bit)
|
Renesas Electronics Corporation
|
