PART |
Description |
Maker |
VG36128161BT VG36128401BT VG36128801BT |
CMOS Synchronous Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
VG36644080/1641DTL-8H |
CMOS Synchronous Dynamic RAM
|
Vanguard International Semiconductor
|
VG36128401A VG36128161A |
CMOS Synchronous Dynamic RAM
|
Vanguard International Semi...
|
VG36646141BT-8 |
CMOS Synchronous Dynamic RAM
|
Vanguard International Semiconductor
|
MB85317A-60 |
CMOS 4M?72Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M?72浣?????ㄦ?RAM)
|
Fujitsu Limited
|
VG3617161BT VG3617161BT-55 VG3617161BT-6 VG3617161 |
16Mb CMOS Synchronous Dynamic RAM
|
ETC[ETC]
|
MSC23S4721E-8BS18 MSC23S4721E |
4,194,304 Word x 72 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK): 4194304 Word x 72 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK): From old datasheet system 4194304 Word x 72 Bit Synchronous Dynamic RAM Module (2BANK)(4M字2位同步动态RAM模块) 4194304 Word x 72 Bit Synchronous Dynamic RAM Module (2BANK)(4M字72位同步动态RAM模块)
|
OKI electronic componet... OKI electronic components OKI[OKI electronic componets] OKI SEMICONDUCTOR CO., LTD.
|
5216165 |
1,048,576-word ′ 8-bit ′ 2-bank Synchronous Dynamic RAM
(SSTL-3)
2,097,152-word ′ 4-bit ′ 2-bank Synchronous Dynamic RAM
(SSTL-3) From old datasheet system
|
hitachi
|
K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4 |
8M X 8 EDO DRAM, 45 ns, PDSO32 8M x 8bit CMOS Dynamic RAM with Extended Data Out 8米8位的CMOS动态随机存储器的扩展数据输 (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
GLT4160L04S-50J3 GLT4160L04S-50TC GLT4160L04SE-60T |
60ns; 4M x 4 CMOS dynamic RAM with extended data output 40ns; 4K x 4 CMOS dynamic RAM with extended data output 50ns; 4M x 4 CMOS dynamic RAM with extended data output
|
List of Unclassifed Manufacturers G-LINK Technology
|
K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns 8M x 8bit CMOS dynamic RAM with extended data out, 60ns 8M x 8bit CMOS dynamic RAM with extended data out, 45ns
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
IS42VS16100C1-10TI |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 1M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO50
|
Integrated Silicon Solution, Inc.
|