| PART |
Description |
Maker |
| AT68166F-YM20-E AT68166F-YM20-SCC AT68166F-YS18-MQ |
Rad Hard 16 MegaBit 3.3V SRAM MultiChip Module
|
ATMEL Corporation
|
| AT68166F |
Rad Hard 16 MegaBit 3.3V SRAM Multi-Chip Module
|
ATMEL Corporation
|
| AT68166H-YM20-E AT68166H-YM20-SCC AT68166H-YM20MQ |
Rad Hard 16 MegaBit 3.3V SRAM Multi-Chip Module
|
ATMEL Corporation
|
| AT60142HT-DS17MMQ AT60142HT-DS17ESCC AT60142HT-DS1 |
Rad Hard 512K x 8 5V Tolerant Very Low Power CMOS SRAM
|
ATMEL Corporation
|
| CD4023BMS CD4012BMS CD4011BMS FN3079 CD4023B CD401 |
From old datasheet system
CMOS NAND Gates
NAND, 3-Input, Triple, Rad-Hard, CMOS, Logic
NAND, 2-Input, Quad, Rad-Hard, CMOS, Logic
NAND, 4-Input, Dual, Rad-Hard, CMOS, Logic
|
INTERSIL[Intersil Corporation]
|
| ISL70001ASEHVFE ISL70001ASEHF ISL70001ASEHVX ISL70 |
Rad Hard and SEE Hard 6A Synchronous Buck Regulator
|
Intersil Corporation
|
| FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 FS |
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3A 200V的电压，1.50欧姆，拉德硬，SEGR性，P通道功率MOSFET
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
3A/ -200V/ 1.50 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| UT6716470-WCA UT6716470-WCC UT6716455-WCC UT671645 |
8K X 8 STANDARD SRAM, 55 ns, CDFP28
8K X 8 STANDARD SRAM, 55 ns, CDIP28
32 Mb (2M x 16, 4M x 8) MirrorBit, Flash Memory 静态存储器| 8KX8 |的CMOS | RAD数据通信硬|计划生育| 28脚|陶瓷
4 Mb (512K x 8, 256K x 16) Boot Sector, Flash Memory
64 Mb (4M x 16) Boot Sector, Flash Memory
SRAM|8KX8|CMOS| RAD HARD|FP|28PIN|CERAMIC
|
Maxim Integrated Products, Inc.
|
| CY7C1475V33-133BGXI CY7C1475V33-133BGI CY7C1475V33 |
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 8.5 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 6.5 ns, PQFP100
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构B>72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM)
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL?/a> Architecture
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL垄芒 Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| CY7C1316BV18 CY7C1318BV18 CY7C1916BV18 CY7C1320BV1 |
18-Mbit DDR-II SRAM 2-Word Burst Architecture(2字Burst结构,18-Mbit DDR-II SRAM) 18兆位的DDR - II SRAM字突发架构（2字突发结18 -兆位的DDR - II SRAM的）
18-Mbit DDR-II SRAM 2-Word Burst Architecture(2瀛?urst缁??,18-Mbit DDR-II SRAM)
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| JANSR2N7402 FN4374 |
3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET
From old datasheet system
3A, 500V, 2.70 Ohm, Rad Hard, Channel Power MOSFET
3A/ 500V/ 2.70 Ohm/ Rad Hard/ N-Channel Power MOSFET
3 A, 500 V, 2.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
|
HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
|
