| PART |
Description |
Maker |
| 1N113 1N100 1N68 1N107 1N128 1N270JTXV 1N143 1502B |
100 V, 60 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
10 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES
12 V, 500 mA, gold bonded germanium diode
50 V, 500 mA, gold bonded germanium diode
75 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
125 V, 500 mA, gold bonded germanium diode
85 V, 500 mA, gold bonded germanium diode
30 V, 500 mA, gold bonded germanium diode
40 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC
BKC International Electronics
List of Unclassifed Man...
|
| 1N480 |
GOLD BONDED DIODES
|
BC
|
| 1N541 |
GOLD BONDED DIODES
|
BKC
|
| 1N100 |
GOLD BONDED GERMANIUM DIODE
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| 1N911 1N910 1N909 1N773 1N773A 1N805 1N772 1N772A |
30 V, 500 mA, gold bonded germanium diode
40 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
65 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
20 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
|
| 1N4193A 1N4184B 1N4187A 1N4183B 1N4182B 1N4186A |
ZENER DIODES DOUBLE SLUG TYPE CONSTRUCTION
GOLD BONDED GERMANIUM DIODES
|
New Jersey Semiconductors
|
| FS1UM-18A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CLY32-00 CLY32-05 CLY32-10 CLY32 |
Standard Recovery Rectifier; Forward Current:25A; Forward Current Average:15.9A; Forward Current Avg Rectified, IF(AV):15.9A; Forward Surge Current Max, Ifsm:350A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes 伊雷尔C波段砷化镓功率场效应
HiRel C-Band GaAs Power-MESFET
|
INFINEON[Infineon Technologies AG]
|
| 1N965 JANTX1N957B-1 1N960 1N985 1N963 1N967 JANTXV |
METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 24 V, 0.417 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AA
METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 10 V, 0.417 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AA
METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 20 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 10 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 56 V, 0.417 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AA
METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 27 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 12 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
MVSTBW 2,5/21-ST 12 V, 0.417 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AA
Zener Voltage Regulator Diode
RES 348-OHM 0.1% 0.125W 25PPM THIN-FILM SMD-1206 TR-7-PA
METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION
|
MICROSEMI CORP-LAWRENCE
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
http://
|
| 1N74 1N60D 1N68A 1N96A 1N72 1N73 1N93 1N63 1N61 1N |
Diode Switching 100V 10A 2-Pin
Diode Switching 50V 3A 2-Pin Case A
GOLD BOUNDED GERMANUM DIODE
Diode Small Signal Switching 75V 0.3A Automotive 2-Pin DO-35 T/R
Diode Switching 125V 0.0003A 2-Pin DO-35
Diode Switching 50V 0.005A 2-Pin Case H
GOLD BONDED GERMANIUM DIODES
|
New Jersey Semiconductor
|
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